Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 46-49 ◽  
Author(s):  
M.L. Dotor ◽  
J. Meléndez ◽  
P. Huertas ◽  
A. Mazuelas ◽  
M. Garriga ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Quantum Well Lasers

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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