Influence of substrate misorientation on quality of active region and performance of triple-quantum-well lasers grown by molecular beam epitaxy

1997 ◽  
Vol 181 (1-2) ◽  
pp. 1-8 ◽  
Author(s):  
D.H. Zhang ◽  
C.Y. Li ◽  
S.F. Yoon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Active Region ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Influence Of Substrate ◽  
And Performance

Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 46-49 ◽  
Author(s):  
M.L. Dotor ◽  
J. Meléndez ◽  
P. Huertas ◽  
A. Mazuelas ◽  
M. Garriga ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Quantum Well Lasers

Interfacial Quality of Strained-Layer InGaAs/GaAs Quantum Well Lasers Grown by Gas-Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
M. Pessa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Strong Dependence ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Gas Source ◽  
Recombination Centers

ABSTRACTWe report a study of interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. It was found that the growth temperature (Tgr) of the InGaAs layer plays an important role in the interfacial quality. For Tgr < 515 °C, a large amount of non-radiative recombination centers is likely to exist in the InGaAs/GaAs quantum well, which can be attributed to the presence of vacancies and atom clusters and lattice misfit defects. For Tgr > 515 °C, the InGaAs/GaAs interfaces show significant roughness due to In segregation. Rapid thermal annealing grades the InGaAs/GaAs interface because of interdiffusion of group-III atoms at the interface, and removes most of the non-radiative recombination centers from the low Tgr (<515 °C) samples. In addition, we observed that the interfacial quality of the InGaAs/GaAs quantum well shows no strong dependence on (100) vicinal orientations of GaAs substrate.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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