Valency control of P-type a-SiC:H having the optical band gap more than 2.5 eV by electron-cyclotron resonance CVD (ECR CVD)

1987 ◽  
Vol 97-98 ◽  
pp. 1079-1082 ◽  
Author(s):  
Yutaka Hattori ◽  
Dusit Kruangam ◽  
Toshihiko Toyama ◽  
Hiroaki Okamoto ◽  
Yoshihiro Hamakawa
Keyword(s):  
Band Gap ◽  
Cyclotron Resonance ◽  
Optical Band Gap ◽  
Electron Cyclotron Resonance ◽  
Type A ◽  
Electron Cyclotron ◽  
P Type

Optical Band Gap of Diamond-Like Carbon Films as a Function of RF Substrate Bias

1989 ◽  
Vol 162 ◽  
Author(s):  
P. W. Pastel ◽  
W. J. Varhue
Keyword(s):  
Band Gap ◽  
Cyclotron Resonance ◽  
Optical Band Gap ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Substrate Bias ◽  
Ion Energy ◽  
Resonance Plasma

ABSTRACTDiamond-like carbon films have been deposited with a low temperature 2.45 GHz electron cyclotron resonance plasma enhanced chemical vapor deposition system. The bombarding ion energy was independently controlled with a RF bias to the substrate. The production rate of reactant species and the impinging ion energy are decoupled with this system. The optical band gap decreased from 2.7 to 1.2 eV as substrate bias was increased from 0 to -140 V.

Characterization and optical properties of diamondlike carbon prepared by electron cyclotron resonance plasma

1999 ◽  
Vol 14 (3) ◽  
pp. 1055-1061 ◽  
Author(s):  
Xiao-Ming He ◽  
S-T. Lee ◽  
I. Bello ◽  
A. C. Cheung ◽  
C. S. Lee
Keyword(s):  
Band Gap ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Optical Methods ◽  
Bonding Structure ◽  
High Electrical Resistivity ◽  
Diamondlike Carbon ◽  
Ar Plasma ◽  
Ar Gas

Diamondlike carbon (DLC) films have been prepared on radio-frequency (rf) biased substrates maintained at low temperature using electron cyclotron resonance CH4–Ar plasma. The effects of negative rf bias and reactant gas composition on the bonding structure, hardness, and resistivity of the films were systematically investigated. DLC films deposited on PMMA (polymethyl methacrylate) were examined by optical methods to determine the absorption coefficients and the optical band gap. It was found that DLC films synthesized at bias voltage of 2(80–100) V and FCH4/FAr of 0.075–0.086 exhibit extreme hardness of more than 3000 kgf mm−2, high electrical resistivity up to 1014 Ω cm, band gap larger than 2.5 eV, and excellent optical transparency. The results indicate that ECR CH4–Ar plasma with low negative rf bias and suitable CH4/Ar gas ratio can process optically transparent and hard protective DLC films on PMMA plastics.

Damage Introduction in Ingap and Aigaas by Electron Cyclotron Resonance ar Plasmas

1996 ◽  
Vol 421 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
R. R. Stradtmann ◽  
C. R. Abernathy ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Bombardment ◽  
Electron Cyclotron ◽  
Type Material ◽  
Plasma Damage ◽  
Ion Density ◽  
Ion Energy ◽  
Electron Traps ◽  
P Type

AbstractChanges in sheet resistance of n- and p-type InGaP exposed to Electron Cyclotron Resonance Ar plasmas have been used to measure the introduction of ion-induced damage. P-type material is much more resistant to change in its conductivity than n-type InGaP, indicating that electron traps are the predominant entity produced by the ion bombardment. For short (˜1 min.) plasma exposures the ion current is more important than ion energy in producing resistance changes. Annealing of damage in both conductivity types occurs with an activation energy of ˜3.4±0.5eV. p+A1GaAs is found to be much more susceptible than n+AlGaAs to the introduction of electrically active deep levels during exposure to Electron Cyclotron Resonance Ar plasmas. In both AlGaAs materials the resistivity of thin (˜0.5μm) epitaxial layers increases rapidly with both plasma exposure time and the ion energy, while the ion density in the Ar discharge has a much greater influence on p+AlGaAs than n-type material. These results suggest that the energetic ion bombardment introduces deep hole traps more readily than deep electron traps in AlGaAs and that pnp transistor structures will be more susceptible to plasma damage than comparable npn structures.

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