On hole and electron scattering effects in energy band investigations by photon-enhanced field emission

1973 ◽  
Vol 34 (2) ◽  
pp. 295-300 ◽  
Author(s):  
F.F. Körmendi
Keyword(s):  
Field Emission ◽  
Electron Scattering ◽  
Energy Band ◽  
Scattering Effects

Evidence of Electron-Electron Scattering from Field Emission

1970 ◽  
Vol 25 (12) ◽  
pp. 804-806 ◽  
Author(s):  
Colin Lea ◽  
R. Gomer
Keyword(s):  
Field Emission ◽  
Electron Scattering

scholarly journals Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

2015 ◽  
Vol 6 ◽  
pp. 901-906 ◽  
Author(s):  
Mykola Telychko ◽  
Jan Berger ◽  
Zsolt Majzik ◽  
Pavel Jelínek ◽  
Martin Švec
Keyword(s):  
Electron Scattering ◽  
Room Temperature ◽  
Single Layer ◽  
Tunneling Current ◽  
Single Layer Graphene ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scattering Effects ◽  
Out Of Plane ◽  
Theoretical Simulations

We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.

scholarly journals High Frequency AlGaN/GaN MODFET's

1997 ◽  
Vol 2 ◽  
Author(s):  
L. Eastman ◽  
K. Chu ◽  
W. Schaff ◽  
M. Murphy ◽  
N. G. Weimann ◽  
...  
Keyword(s):  
Output Power ◽  
Electron Scattering ◽  
High Frequency ◽  
Ohmic Contacts ◽  
Load Resistance ◽  
Power Combining ◽  
Scattering Effects ◽  
Theoretical Predictions ◽  
Lower Mobility ◽  
Average Electron

Short-gate MODFET's of AlGaN/GaN on Sapphire have been fabricated and characterized with gate lengths in the .12 - .25 μm range. Values of ft = 50 GHz and fmax = 100 GHz have been obtained. Analyzing the performance, the average electron transit velocity is shown to be 1.25 × 107 cm/s and in some cases well under that value. This compares with theoretical predictions of ~ 2.0 × 107 cm/s. The electron scattering effects of dislocations, which are charged, are modeled to explain the lower mobility. Ion bombardment or dry etching is used for mesa isolation. Ti/Al/Ti/Au sintered for 100 seconds at 800 °C is used to yield ohmic contacts of .5 - 1.0 Ω-mm. Pt/Au Schottky gates are used. A high breakdown voltage, exceeding 100 V even for short gate MODFET's, shows that ten times higher load resistance values are possible, compared with GaAs MODFET's. Normalized output power levels well over 10 W/ mm are thus projected for GaN MODFET's on SiC substrates, where the thermal conductivity is about 5W/cm-°C. with future integrated traveling-wave, power-combining circuits, output power > 100 W at 10 GHz is predicted.

Electron scattering by atomic chains: Multiple-scattering effects

1989 ◽  
Vol 39 (12) ◽  
pp. 8275-8283 ◽  
Author(s):  
M.-L. Xu ◽  
J. J. Barton ◽  
M. A. Van Hove
Keyword(s):  
Multiple Scattering ◽  
Electron Scattering ◽  
Scattering Effects ◽  
Atomic Chains ◽  
Multiple Scattering Effects
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