The synthesis and layer growth of zinc silicon arsenide, ZnSiAs2, by chemical vapor deposition in an open flow system

ABSTRACTThin heteroepitaxial films of Si1-x-yGexCy have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2% C were grown at 700°C with good crystallinity and very few interracial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5% C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C2H4), which enabled growth of single crystal SiGeC films with higher C content.

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Investigation of growth rates and morphology for diamond growth by chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.1992.1438 ◽

1992 ◽

Vol 7 (6) ◽

pp. 1438-1444 ◽

Cited By ~ 26

Author(s):

M.P. Everson ◽

M.A. Tamor

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Layer Growth ◽

Diamond Growth ◽

Scanning Tunneling ◽

Layer By Layer ◽

Tunneling Microscopy ◽

Limited Growth ◽

Diffusion Limited

We describe two complementary studies of diamond growth by chemical vapor deposition. In the first, the early stages of growth of randomly distributed nuclei on silicon are studied by scanning tunneling microscopy. For growth times from 1 to 30 min nearly all crystallites are three dimensional, and increase in volume as t1.5. Although this result could be interpreted in terms of diffusion limited growth, the conditions for diamond CVD are more consistent with rate limited growth where the crystals are expected to gain volume as t3. This anomaly can be explained in terms of a two-species growth mechanism in which the rate constant for carbon addition is proportional to the diffusion limited flux of atomic hydrogen. Other mechanisms giving rise to the observed t1.5 dependence are also considered. The second study uses both scanning electron and tunneling microscopies to examine the morphology of a boron-doped film homoepitaxial to the {100} surface of natural type 2a diamond. In regions distant from gross defects, this film is very smooth. However, gross defects appear to initiate growth of new epitaxial layers at a rate much higher than in defect-free regions. This observation suggests that diamond growth is promoted by “enabling defects” and that without such defects nucleation of new layers is a slow process and permits layer-by-layer growth at a much lower rate.

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Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)

MRS Advances ◽

10.1557/adv.2016.369 ◽

2016 ◽

Vol 1 (55) ◽

pp. 3667-3672 ◽

Cited By ~ 5

Author(s):

D. Convertino ◽

A. Rossi ◽

V. Miseikis ◽

V. Piazza ◽

C. Coletti

Keyword(s):

Thermal Decomposition ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Large Scale ◽

Chemical Vapor ◽

Layer Growth ◽

Force Microscopy ◽

Layer Graphene ◽

Atomic Force ◽

Grown Graphene

ABSTRACTThis work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.

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