Growth and characterization of pentenary Cu0.5Ag0.5InSSe crystals grown by chemical vapor transport technique

1995 ◽  
Vol 30 (11) ◽  
pp. 1371-1377 ◽  
Author(s):  
M.J. Tafreshi ◽  
K. Balakrishnan ◽  
R. Dhanasekaran
2013 ◽  
Vol 1538 ◽  
pp. 95-101 ◽  
Author(s):  
D. O. Dumcenco ◽  
Y. P. Wang ◽  
S. Levcenco ◽  
K. K. Tiong ◽  
Y. S. Huang

ABSTRACTThe vibrational properties of kesterite Cu2ZnSnS4 (CZTS) single crystals were studied by polarization-dependent Raman scattering measurements. The CZTS crystals grown by chemical vapor transport technique using iodine trichloride as a transport agent consist of several mirror-like planes. The detailed analysis of the experimental spectra obtained from different planes allows determining the symmetry assignment of the observed Raman-active modes. The wavenumber values of Raman-active modes are compared with the results of recent theoretical calculations. The presented data are useful for examination of CZTS absorber films applied for solar cells to clarify the existence of structural or phase inhomogeneities.


2002 ◽  
Vol 719 ◽  
Author(s):  
K. Thonke ◽  
N. Kerwien ◽  
A. Wysmolek ◽  
M. Potemski ◽  
A. Waag ◽  
...  

AbstractWe investigate by photoluminescence (PL) nominally undoped, commercially available Zinc Oxide substrates (from Eagle Picher) grown by seeded chemical vapor transport technique in order to identify residual donors and acceptors. In low temperature PL spectra the dominant emission comes from the decay of bound exciton lines at around 3.36 eV. Zeeman measurements allow the identification of the two strongest lines and some weaker lines in-between as donorrelated. From the associated two-electron satellite lines binding energies of the major donors of 48 meV and 55 meV, respectively, can be deduced.


2002 ◽  
Vol 744 ◽  
Author(s):  
G.A. Verozubova ◽  
A. I. Gribenyukov ◽  
M.C. Ohmer ◽  
N.C. Fernelius ◽  
J.T. Goldstein

ABSTRACTThermodynamic analysis of the vapor phase over ZnGeP2 in Zn-Ge-P-Cl system has been carried out. The analysis showed that this system can be used for the vapor growth of ZnGeP2. Homoepitaxial layers of ZnGeP2 were grown in a closed system using chemical vapor transport. Electrical and photoluminescence properties of the layers were studied, and crystal lattice parameters were measured. Comparison of properties for bulk and vapor grown ZnGeP2 crystals were carried out. It was found that the vapor grown crystals have more perfect structure than the bulk ones, particularly, they have significantly lower vacancy concentration.


2017 ◽  
Vol 459 ◽  
pp. 81-86 ◽  
Author(s):  
Christian Nowka ◽  
Markus Gellesch ◽  
Jorge Enrique Hamann Borrero ◽  
Sven Partzsch ◽  
Christoph Wuttke ◽  
...  

1989 ◽  
Vol 24 (8) ◽  
pp. 1005-1010 ◽  
Author(s):  
W. DeSisto ◽  
B.T. Collins ◽  
R. Kershaw ◽  
K. Dwight ◽  
A. Wold

2013 ◽  
Vol 544 ◽  
pp. 148-151 ◽  
Author(s):  
Jun Guo ◽  
Cai Xia Li ◽  
Lin Zhang ◽  
Jin Feng Xia ◽  
Danyu Jiang ◽  
...  

The layered FeOCl has been synthesized from Fe2O3 and FeCl3 by chemical vapor transport technique at 380°C., and an intercalation of sodium benzoate into as-synthesized FeOCl was conduct. After the intercalation composites were sonicated for 4 h in butyl alcohol, the colloidal suspension of layered iron oxide nanosheets was obtained. The FeOCl and the intercalation composites were analyzed by powder X-ray diffraction (XRD). Transmission Electron Microscopy (TEM) was also used to characterize the morphologies of the FeO+ Nanosheets. Except to this, the selected area electron diffraction was also performed to examine the iron nanosheets.


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