A CAD coupled laser beam test system for digital circuit failure analysis

1992 ◽  
Vol 32 (1-2) ◽  
pp. 300-301
1990 ◽  
Vol 12 (1-4) ◽  
pp. 359-366 ◽  
Author(s):  
Andrea Haardt ◽  
Carlo Morandi ◽  
Massimo Vanzi

Author(s):  
Kristopher D. Staller ◽  
Corey Goodrich

Abstract Soft Defect Localization (SDL) is a dynamic laser-based failure analysis technique that can detect circuit upsets (or cause a malfunctioning circuit to recover) by generation of localized heat or photons from a rastered laser beam. SDL is the third and seldom used method on the LSM tool. Most failure analysis LSM sessions use the endo-thermic mode (TIVA, XIVA, OBIRCH), followed by the photo-injection mode (LIVA) to isolate most of their failures. SDL is seldom used or attempted, unless there is a unique and obvious failure mode that can benefit from the application. Many failure analysts, with a creative approach to the analysis, can employ SDL. They will benefit by rapidly finding the location of the failure mechanism and forgoing weeks of nodal probing and isolation. This paper will cover circuit signal conditioning to allow for fast dynamic failure isolation using an LSM for laser stimulation. Discussions of several cases will demonstrate how the laser can be employed for triggering across a pass/fail boundary as defined by voltage levels, supply currents, signal frequency, or digital flags. A technique for manual input of the LSM trigger is also discussed.


Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.


Scanning ◽  
1987 ◽  
Vol 9 (5) ◽  
pp. 201-204 ◽  
Author(s):  
M. Brunner ◽  
D. Winkler ◽  
R. Schmitt ◽  
B. Lischke

1997 ◽  
Vol 37 (12) ◽  
pp. 1841-1847 ◽  
Author(s):  
Kiyoshi Nikawa ◽  
Shoji Inoue

1981 ◽  
Vol 35 (6) ◽  
pp. 591-593 ◽  
Author(s):  
Gregory R. Daigneault ◽  
Michael D. Morris

The spatial dependence of inverse Raman signal intensities was investigated. Aqueous 0.5 M potassium nitrate in cells ranging from 1 to 50 mm was used as the test system. Three focusing lenses were used. The data do not fit the arctan dependence derived for Gaussian beams. The deviations are ascribed to the non-Gaussian profile of the pulsed dye laser beam.


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