Test Circuit Conditioning for Soft Defect Localization

Author(s):  
Kristopher D. Staller ◽  
Corey Goodrich

Abstract Soft Defect Localization (SDL) is a dynamic laser-based failure analysis technique that can detect circuit upsets (or cause a malfunctioning circuit to recover) by generation of localized heat or photons from a rastered laser beam. SDL is the third and seldom used method on the LSM tool. Most failure analysis LSM sessions use the endo-thermic mode (TIVA, XIVA, OBIRCH), followed by the photo-injection mode (LIVA) to isolate most of their failures. SDL is seldom used or attempted, unless there is a unique and obvious failure mode that can benefit from the application. Many failure analysts, with a creative approach to the analysis, can employ SDL. They will benefit by rapidly finding the location of the failure mechanism and forgoing weeks of nodal probing and isolation. This paper will cover circuit signal conditioning to allow for fast dynamic failure isolation using an LSM for laser stimulation. Discussions of several cases will demonstrate how the laser can be employed for triggering across a pass/fail boundary as defined by voltage levels, supply currents, signal frequency, or digital flags. A technique for manual input of the LSM trigger is also discussed.

Author(s):  
Jed Paolo Deligente ◽  
Saidaliah Sarip

Abstract Soft Defect Localization (SDL) method has been a common failure analysis technique used in fault isolation of temperature dependent failures, however proper signal conditioning and conversion of the monitored signal into a pass/fail signal are critical in acquiring an accurate defect location. This paper presents case studies where LabVIEW software using NI-PXI test platform was successfully implemented to effectively convert the failure mode into a pass/fail signal which provided a reliable SDL result.


2018 ◽  
Author(s):  
Ke-Ying Lin ◽  
Chih-Yi Tang ◽  
Yu Chi Wang

Abstract The paper demonstrates the moving of lock-in thermography (LIT) spot location by adjusting the lock-in frequency from low to high. Accurate defect localization in stacked-die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results, which provided clear physical defect modes of the stacked-die devices.


Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.


Author(s):  
Sarven Ipek ◽  
David Grosjean

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.


Author(s):  
Hui Peng Ng ◽  
Ghim Boon Ang ◽  
Chang Qing Chen ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  

Abstract With the evolution of advanced process technology, failure analysis is becoming much more challenging and difficult particularly with an increase in more erratic defect types arising from non-visual failure mechanisms. Conventional FA techniques work well in failure analysis on defectively related issue. However, for soft defect localization such as S/D leakage or short due to design related, it may not be simple to identify it. AFP and its applications have been successfully engaged to overcome such shortcoming, In this paper, two case studies on systematic issues due to soft failures were discussed to illustrate the AFP critical role in current failure analysis field on these areas. In other words, these two case studies will demonstrate how Atomic Force Probing combined with Scanning Capacitance Microscopy were used to characterize failing transistors in non-volatile memory, identify possible failure mechanisms and enable device/ process engineers to make adjustment on process based on the electrical characterization result. [1]


Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.


2020 ◽  
Vol 11 (1) ◽  
pp. 185
Author(s):  
Jian Shi ◽  
Mingbo Tong ◽  
Chuwei Zhou ◽  
Congjie Ye ◽  
Xindong Wang

The failure types and ultimate loads for eight carbon-epoxy laminate specimens with a central circular hole subjected to tensile load were tested experimentally and simulated using two different progressive failure analysis (PFA) methodologies. The first model used a lamina level modeling based on the Hashin criterion and the Camanho stiffness degradation theory to predict the damage of the fiber and matrix. The second model implemented a micromechanical analysis technique coined the generalized method of cells (GMC), where the 3D Tsai–Hill failure criterion was used to govern matrix failure, and the fiber failure was dictated by the maximum stress criterion. The progressive failure methodology was implemented using the UMAT subroutine within the ABAQUS/implicit solver. Results of load versus displacement and failure types from the two different models were compared against experimental data for the open hole laminates subjected to tensile displacement load. The results obtained from the numerical simulation and experiments showed good agreement. Failure paths and accurate damage contours for the tested specimens were also predicted.


1969 ◽  
Author(s):  
Jack W. Martz ◽  
James E. Sherlock ◽  
Jason R. Lemon

2019 ◽  
Vol 6 (3) ◽  
pp. 264
Author(s):  
Dina Silvia ◽  
Zulfadhli Zulfadhli

This research aimed to (a) describe the structure of folklore legend of Syekh Katik Sangko in Pasir Subdistrict, central Pariaman District, Pariaman City. (b) describe the social function of folklore legend of Sheikh Katik Sangko in Pasir Village, Central Pariaman District, Pariaman City. The type of this research is qualitative research with descriptive methods. The data analysis technique was carried out through four steps. The first step was to carried out data inventory. The second was the data classification or analysis phase. The third step was a discussion and conclusion of the results of classification or data analysis. The last was reporting the research as thesis. The results of this study were found that in the folklore legend of Syekh Katik Sangko in Pasir Subdistrict, central Pariaman District, Pariaman City has 10 figures. The theme in this story is the spreading of Islam in Pariaman. Social functions found are means of education, inheritance and identity. Keywords: structure, social function, folklore


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