A gain regulation system for a large set of photomultipliers using light-emitting diodes and optical fibers

1981 ◽  
Vol 190 (1) ◽  
pp. 41-51 ◽  
Author(s):  
M. de Palma ◽  
G. Maggi ◽  
A. Sacchetti ◽  
P. Spinelli ◽  
F. Waldner
2005 ◽  
Vol 20 (16) ◽  
pp. 3839-3841
Author(s):  
◽  
PAUL E. KARCHIN

The requirements for a linear collider muon detector are discussed and a solution is presented based on solid scintillating strips with embedded wavelength shifting optical fibers. Multi-anode photo-multiplier tubes are a good candidate for photon detection. Their single photo-electron response can be calibrated using fast pulses from light-emitting diodes.


2017 ◽  
Vol 51 (22) ◽  
pp. 13319-13326 ◽  
Author(s):  
Li Ling ◽  
Heather Tugaoen ◽  
Jonathon Brame ◽  
Shahnawaz Sinha ◽  
Chuanhao Li ◽  
...  

1975 ◽  
Vol 46 (8) ◽  
pp. 3468-3474 ◽  
Author(s):  
R. A. Abram ◽  
R. W. Allen ◽  
R. C. Goodfellow

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.


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