On the thermal stability of xanthan gum

Polymer ◽  
1985 ◽  
Vol 26 (10) ◽  
pp. 1549-1553 ◽  
Author(s):  
F. Lambert ◽  
M. Rinaudo
Gels ◽  
2021 ◽  
Vol 7 (4) ◽  
pp. 179
Author(s):  
Youjie Sheng ◽  
Canbin Yan ◽  
Yang Li ◽  
Yunchuan Peng ◽  
Li Ma ◽  
...  

The foams stabilized by nanoparticles (NPs), water-soluble polymers, and surfactants have potential application prospects in the development of new, environmentally friendly firefighting foams. In the present study, a gel foam containing a water-soluble polymer (xanthan gum, XG), hydrophilic silica NPs, hydrocarbon surfactant (SDS), and fluorocarbon surfactant (FS-50) were prepared. The surface activity, conductivity, viscosity, and foaming ability of foam dispersions were characterized. The gel foam stability under a radiation heat source and temperature distribution in the vertical foam layer were evaluated systematically. The results show that the addition of NPs and XG has a significant effect on the foaming ability, viscosity and foam thermal stability, but has a very subtle effect on the conductivity and surface activity. The foaming ability of the FS-50/SDS solution was enhanced by the addition of NPs, but decreased with increasing the XG concentration. The thermal stability of the foams stabilized by SDS/FS-50/NPs/XG increased with the addition of NPs and increasing XG concentration. Foam drainage and coarsening were significantly decelerated by the addition of NPs and XG. The slower foam drainage and coarsening are the main reason for the intensified foam thermal stability. The results obtained from this study can provide guidance for developing new firefighting foams.


Polymers ◽  
2022 ◽  
Vol 14 (2) ◽  
pp. 243
Author(s):  
Shuai Yuan ◽  
Jiayuan Liang ◽  
Yanmin Zhang ◽  
Hongyu Han ◽  
Tianyi Jiang ◽  
...  

Xanthan gum is prone to thermal oxidative degradation, which limits its applications. However, conformational changes in xanthan gum and appropriate stabilizers may improve its thermal stability. Therefore, in this study, we aimed to establish a strategy to maintain the viscosity of xanthan gum during long-term storage at high temperatures. We modified the original strain used for xanthan gum production by genetic engineering and added stabilizers during the production process. The structure and thermal stability of the resulting xanthan gum samples were then determined. Pyruvyl deficiency, combined with the addition of sodium sulfite and glyoxal during the production process, was found to significantly improve the maintenance of viscosity. The apparent viscosity of the new xanthan gum solution remained above 100 mPa·s after being stored at 90 °C for 48 days. Fourier-transform infrared spectra and scanning electron microscopy images showed that pyruvate-free xanthan gum with added stabilizers had more extensive cross-linking than natural xanthan gum. In conclusion, these findings may contribute to the use of xanthan gum in applications that require high temperatures for a long period of time.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  

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