Metastable phase formation in thin films formed by laser breakdown chemical vapor deposition

AbstractThin films produced by laser breakdown chemical vapor deposition from nickel and iron carbonyls and by implanting Ni foils with varying levels of C have been characterizea by transmission electron microscopy. Decomposition of Ni(CO)4 produces polycrystalline films of fcc Ni and metastable ordered nexaogonal Ni3C. This metastable phase is identical to that produced by gas carburization, rapid solidification of Ni-C melts, and ion implantation ot C into Ni at low;co ncentrations. Increasing the H2 content in the gas mixture during laser deposition reduces the grain size of the films significantly witn grain sizes smaller than 10 nanometers produced. Laser uecomposition of Fe(CO)5 produces films with islands of fcc gamma-Fe and finely dispersed metastable Fe3C (Cementite). In addition, the ferrous oxides Fe2O3 and Fe3O4 were found in these samples. Implants of C into pure Ni foils at 77°K and at a concentration of 35 at.% produced amorphous layers. Implants at the same dose at room temperature did not proouce amorphous layers.

Download Full-text

Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phase

Chemistry of Materials ◽

10.1021/cm00019a005 ◽

1992 ◽

Vol 4 (1) ◽

pp. 11-14 ◽

Cited By ~ 78

Author(s):

Andrew N. MacInnes ◽

Michael B. Power ◽

Andrew R. Barron

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metastable Phase ◽

Chemical Vapor ◽

Gallium Sulfide

Download Full-text

Oxygen Impurity in Cubic Boron Nitride Thin Films Prepared by Plasma-enhanced Chemical Vapor Deposition

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2010.00748 ◽

2010 ◽

Vol 25 (7) ◽

pp. 748-752 ◽

Cited By ~ 2

Author(s):

Hang-Sheng YANG ◽

Fa-Min QIU ◽

An-Min NIE

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Boron Nitride ◽

Vapor Deposition ◽

Cubic Boron Nitride ◽

Chemical Vapor ◽

Oxygen Impurity

Download Full-text

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.10(3).03001 ◽

2018 ◽

Vol 10 (3) ◽

pp. 03001-1-03001-6 ◽

Cited By ~ 2

Author(s):

Bharat Gabhale ◽

◽

Ashok Jadhawar ◽

Ajinkya Bhorde ◽

Shruthi Nair ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Cvd Method ◽

High Band

Download Full-text

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979209048559 ◽

2009 ◽

Vol 23 (09) ◽

pp. 2159-2165 ◽

Cited By ~ 2

Author(s):

SUDIP ADHIKARI ◽

MASAYOSHI UMENO

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Surface Wave ◽

Amorphous Carbon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Hydrogenated Amorphous Carbon ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Download Full-text