Dislocation densities in [001]-orientated -Mn single crystals deformed in tension. Determination by X-ray diffraction line broadening

1989 ◽  
Vol 23 (5) ◽  
pp. 785-788 ◽  
Author(s):  
A. Hilscher ◽  
M. Wilkens
Keyword(s):  
Single Crystals ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities

Dislocations in thin metal films observed with X-ray diffraction

2001 ◽  
Vol 673 ◽  
Author(s):  
Léon J. Seijbel ◽  
Rob Delhez
Keyword(s):  
Fourier Coefficients ◽  
Metal Films ◽  
Thin Metal ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Arrangement ◽  
Dislocation Densities ◽  
Metal Layers

ABSTRACTX-ray diffraction has been used to measure the stress, the crystallite size and the dislocation distribution in thin metal layers. By measuring two orders of a reflection, the contribution of the size distribution to the diffraction line broadening can be eliminated. A model equation is fitted to the strain Fourier coefficients of the diffraction line from which the dislocation arrangement can be obtained. For untextured nickel on steel or on silicon the dislocation densities have been obtained. It is demonstrated that for highly textured layers more information can be obtained than for untextured layers. It was found that a heated molybdenum layer on oxidized silicon showed only inclined screw dislocations.

X-ray diffraction line broadening on vibrating dry-milled Two Crows sepiolite

2006 ◽  
Vol 54 (3) ◽  
pp. 390-401 ◽  
Author(s):  
Joaquin Bastida ◽  
Marek A. Kojdecki ◽  
Pablo Pardo ◽  
Pedro Amorós
Keyword(s):  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray

X-Ray Diffraction and Reflectometry Investigation of Interdiffusion In Sputtered Niobium-Tungsten Bilayers

1999 ◽  
Vol 562 ◽  
Author(s):  
U. Welzel ◽  
P. Lamparter ◽  
E. J. Mittemeijer
Keyword(s):  
Diffusion Coefficients ◽  
Low Temperatures ◽  
Qualitative Evaluation ◽  
Diffraction Line ◽  
Published Data ◽  
Concentration Profiles ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Bulk Materials ◽  
X Ray

ABSTRACTInterdiffusion in sputtered niobium(45nm)-tungsten(45nm) bilayers upon annealing at low temperatures (T<1000K) has been investigated using X-ray reflectometry and diffraction. The accompanying changes in macrostress and microstructure have been characterized by applying the X-ray diffraction sin2ψ T method and by qualitative evaluation of the diffraction line broadening, respectively. Annealing causes, besides interdiffusion, changes of macrostress and decrease of microstructural imperfection. Concentration profiles corresponding to diffusion lengths of only a few nanometers were determined by simulation of the measured reflectivity patterns. The values obtained for the diffusion coefficients are compared with corresponding values obtained by extrapolation from published data for bulk materials at much higher temperatures.

Macro-and Microstrain Relaxation in Annealed Ag Films During Ageing at Room Temperature

1997 ◽  
Vol 505 ◽  
Author(s):  
R. C. Currie ◽  
R. Delhez ◽  
E. J. Mitiemeijer
Keyword(s):  
Room Temperature ◽  
Strain Relaxation ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Diffraction Line Profile ◽  
The Matrix ◽  
Profile Position

ABSTRACTThe relaxation of thermally induced strain in 500 nm thick polycrystalline Ag layers electron-beam deposited onto Si wafers was traced during ageing at room temperature. The layers consisted predominantly of matrix crystallites with {111} planes parallel to the surface and twin crystallites with {51 l} planes parallel to the surface. The macrostrain in the plane of the layer was determined from the X-ray diffraction line-profile position and the microstrain from the diffraction-line broadening. The residual macrostress relaxed from 160 MPa to 30 MPa in the matrix crystallites and from 170 MPa to 50 MPa in the twin crystallites. Simultaneously with the decrease in macrostress the microstrain decreases significantly for both texture fractions. The strain relaxation behaviour is governed by movement and subsequent annihilation of defects in the layer.

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