X-Ray Diffraction and Reflectometry Investigation of Interdiffusion In Sputtered Niobium-Tungsten Bilayers

1999 ◽  
Vol 562 ◽  
Author(s):  
U. Welzel ◽  
P. Lamparter ◽  
E. J. Mittemeijer
Keyword(s):  
Diffusion Coefficients ◽  
Low Temperatures ◽  
Qualitative Evaluation ◽  
Diffraction Line ◽  
Published Data ◽  
Concentration Profiles ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Bulk Materials ◽  
X Ray

ABSTRACTInterdiffusion in sputtered niobium(45nm)-tungsten(45nm) bilayers upon annealing at low temperatures (T<1000K) has been investigated using X-ray reflectometry and diffraction. The accompanying changes in macrostress and microstructure have been characterized by applying the X-ray diffraction sin2ψ T method and by qualitative evaluation of the diffraction line broadening, respectively. Annealing causes, besides interdiffusion, changes of macrostress and decrease of microstructural imperfection. Concentration profiles corresponding to diffusion lengths of only a few nanometers were determined by simulation of the measured reflectivity patterns. The values obtained for the diffusion coefficients are compared with corresponding values obtained by extrapolation from published data for bulk materials at much higher temperatures.

X-ray diffraction line broadening on vibrating dry-milled Two Crows sepiolite

2006 ◽  
Vol 54 (3) ◽  
pp. 390-401 ◽  
Author(s):  
Joaquin Bastida ◽  
Marek A. Kojdecki ◽  
Pablo Pardo ◽  
Pedro Amorós
Keyword(s):  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray

Macro-and Microstrain Relaxation in Annealed Ag Films During Ageing at Room Temperature

1997 ◽  
Vol 505 ◽  
Author(s):  
R. C. Currie ◽  
R. Delhez ◽  
E. J. Mitiemeijer
Keyword(s):  
Room Temperature ◽  
Strain Relaxation ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Diffraction Line Profile ◽  
The Matrix ◽  
Profile Position

ABSTRACTThe relaxation of thermally induced strain in 500 nm thick polycrystalline Ag layers electron-beam deposited onto Si wafers was traced during ageing at room temperature. The layers consisted predominantly of matrix crystallites with {111} planes parallel to the surface and twin crystallites with {51 l} planes parallel to the surface. The macrostrain in the plane of the layer was determined from the X-ray diffraction line-profile position and the microstrain from the diffraction-line broadening. The residual macrostress relaxed from 160 MPa to 30 MPa in the matrix crystallites and from 170 MPa to 50 MPa in the twin crystallites. Simultaneously with the decrease in macrostress the microstrain decreases significantly for both texture fractions. The strain relaxation behaviour is governed by movement and subsequent annihilation of defects in the layer.

Dislocations, crystallite size, and planar faults in nanocrystalline ceria

2009 ◽  
Vol 24 (3) ◽  
pp. 228-233 ◽  
Author(s):  
S. R. Aghdaee ◽  
V. Soleimanian
Keyword(s):  
Grain Size ◽  
Dislocation Density ◽  
Crystallite Size ◽  
Cerium Oxide ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanocrystalline Ceria ◽  
Hall Plot

The modified Williamson–Hall and Warren–Averbach methods were used successfully for analyzing experimentally observed anisotropic X-ray diffraction line broadening and for determining reliable values of crystallite size and dislocation density in cerium oxide. The modified Williamson–Hall plot gives 22.3(2) nm for volume-weighted crystallite size, while the modified Warren–Averbach produces 18.0(2) nm for area-weighted grain size. The dislocation density and effective outer cut-off radius of dislocations obtained from the modified Warren–Averbach method are 1.8(3)×1015 m−2 and 15.5(1) nm, respectively.

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