Magnetoresistance of inversion and accumulation layers in MOS structures on pSi (100)

1984 ◽  
Vol 50 (3) ◽  
pp. 273-277 ◽  
Author(s):  
V.T. Dolgopolov ◽  
S.I. Dorozhkin ◽  
A.A. Shashkin
Keyword(s):  
Mos Structures

Formation of oxide-trapped charges in 6HSiC MOS structures

1997 ◽  
Vol 50 (5) ◽  
pp. 429-433
Author(s):  
Masahito Yoshikawa ◽  
Kazunari Saitoh ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Isamu Nashiyama ◽  
...  
Keyword(s):  
Mos Structures

scholarly journals MOS structures containing silicon nanoparticles for memory device applications

2008 ◽  
Vol 113 ◽  
pp. 012034 ◽  
Author(s):  
N Nedev ◽  
D Nesheva ◽  
E Manolov ◽  
R Brüggemann ◽  
S Meier ◽  
...  
Keyword(s):  
Silicon Nanoparticles ◽  
Memory Device ◽  
Device Applications ◽  
Mos Structures

Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

1985 ◽  
Vol 28 (7) ◽  
pp. 717-720 ◽  
Author(s):  
Y. Nissan-Cohen ◽  
J. Shappir ◽  
D. Frohman-Bentchkowsky
Keyword(s):  
Charge Trapping ◽  
Tunneling Currents ◽  
Mos Structures ◽  
Nordheim Tunneling

Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers

2000 ◽  
Vol 114 (1) ◽  
pp. 33-37 ◽  
Author(s):  
Z Gaburro ◽  
G Pucker ◽  
P Bellutti ◽  
L Pavesi
Keyword(s):  
Mos Structures

Charge-Transfer Dipoles at the Si-SiO2 Interface and the Metal-Semiconductor Worfunction Difference In Mos Devices.

1987 ◽  
Vol 105 ◽  
Author(s):  
Hisham Z. Massoud
Keyword(s):  
Dipole Moment ◽  
Charge Transfer ◽  
Dipole Moments ◽  
Silicon Substrates ◽  
Interface Dipole ◽  
Mos Devices ◽  
Flatband Voltage ◽  
The Difference ◽  
Definition Of ◽  
Mos Structures

AbstractThe magnitude of the dipole moment at the Si-SiO2 interface resulting from partial charge transfer that takes place upon the formation of interface bonds has been calculated. The charge transfer occurs because of the difference in electronegativity between silicon atoms and SiO2 molecules which are present across the interface. Results obtained for (100) and (111) silicon substrates indicate that the magnitude of the interface dipole moment is dependent on substrate orientation and the interface chemistry. Dipole moments at the Si-SiO2 and gate-SiO2 interfaces should be included in the definition of the flatband voltage VFB of MOS structures. CV-based measurements of the metal-semiconductor workfunction difference φms on (100) and (111) silicon oxidized in dry oxygen and metallized with Al agree with the predictions of this model. Other types of interface dipoles and their processing dependence are briefly discussed.

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