scholarly journals MOS structures containing silicon nanoparticles for memory device applications

2008 ◽  
Vol 113 ◽  
pp. 012034 ◽  
Author(s):  
N Nedev ◽  
D Nesheva ◽  
E Manolov ◽  
R Brüggemann ◽  
S Meier ◽  
...  
Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.


2016 ◽  
Vol 27 (7) ◽  
pp. 7478-7486
Author(s):  
Mitesh Chakraborty ◽  
Swarat Chaudhuri ◽  
Vineet Kumar Rai ◽  
Vishal Mishra

2000 ◽  
Vol 639 ◽  
Author(s):  
D. Mistele ◽  
T. Rotter ◽  
R. Ferretti ◽  
F. Fedler ◽  
H. Klausing ◽  
...  

ABSTRACTPhotoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.


2014 ◽  
Vol 53 (4) ◽  
pp. 602-614 ◽  
Author(s):  
Lei Dong ◽  
Han-Sheng Sun ◽  
Jau-Tzeng Wang ◽  
Wen-Ya Lee ◽  
Wen-Chang Chen

2020 ◽  
Vol 14 (6) ◽  
Author(s):  
Sreemanta Mitra ◽  
Saloni Kakkar ◽  
Tanweer Ahmed ◽  
Arindam Ghosh

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