Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress

1996 ◽  
Vol 36 (11-12) ◽  
pp. 1619-1622 ◽  
Author(s):  
R. Kies ◽  
T. Egilsson ◽  
G. Ghibaudo ◽  
G. Pananakakis
Keyword(s):  
Charge Density ◽  
Oxide Charge ◽  
Mos Structures

scholarly journals A comparative study of hole and electron inversion layer quantization in MOS structures

2010 ◽  
Vol 7 (2) ◽  
pp. 185-193 ◽  
Author(s):  
Amit Chaudhry ◽  
Nath Roy
Keyword(s):  
Charge Density ◽  
Marked Decrease ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Capacitance ◽  
Variation Approach ◽  
Inversion Charge ◽  
Mos Structures ◽  
Good Agreement

In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

Effect of Oxide Charge Density in Passivation Films on Breakdown Voltage of Planar Diodes

1975 ◽  
Vol 14 (5) ◽  
pp. 733-734 ◽  
Author(s):  
Satoru Ito ◽  
Masataka Ota ◽  
Eiichi Yamada ◽  
Katsuro Sugawara
Keyword(s):  
Charge Density ◽  
Breakdown Voltage ◽  
Oxide Charge ◽  
Planar Diodes

Effect of Phosphorus-Doped Polysilicon Anneal on Thin Oxide Reliability as Probed with X-Ray Damage Characterization

1994 ◽  
Vol 338 ◽  
Author(s):  
R. Nachman ◽  
F. Cerrina
Keyword(s):  
Gate Oxide ◽  
Radiation Sensitivity ◽  
Oxide Charge ◽  
X Ray ◽  
Damage Characterization ◽  
Oxide Reliability ◽  
The Creation ◽  
Thin Oxide ◽  
Phosphorus Doped ◽  
Mos Structures

ABSTRACTIn this paper we address the degradation of oxide reliability after annealing the phosphorusdoped polysilicon of MOS structures. The oxide reliability was studied in terms of X-ray radiation sensitivity as well as breakdown characteristics.We found that annealing the polysilicon increased the radiation sensitivity of the gate oxide. We believe that this increase is a result of the phosphorus out-diffusion from the polysilicon into the oxide and a result of the creation of phosphorus related traps in the oxide bulk. We also found that the oxide charge to breakdown (Qbd) degradation correlates well with the density of the phosphorus in the oxide.

Radiation-Induced Oxide Charge Distributions in Simox Buried Oxides

1987 ◽  
Vol 107 ◽  
Author(s):  
J. M. Hwang ◽  
J. Bartko ◽  
P. Rai-Choudhury ◽  
W. E. Bailey
Keyword(s):  
Optical Properties ◽  
Ionizing Radiation ◽  
Charge Density ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Electronic Circuits ◽  
Density Region ◽  
Oxide Charge ◽  
Thermal Oxide ◽  
Radiation Induced

AbstractIn ionizing-radiation environments, oxide charge buildup in the buried oxide of SIMOX SOI material causes an increase in the back-channel leakage current, resulting in an instability in electronic circuits formed on SIMOX wafers. We report the measured distributions of radiation-induced oxide charge density in buried oxides formed by oxygen implantation. These are obtained by etch-back experiments including C-V measurements using a mercury probe and ellipsometer measurements. The results show a region of higher charge density about 1500A from the top interface with a lower density region within a few hundred angstroms of the top interface. The results also show that the oxide charge density decreases with annealing temperature. Some unusual optical properties of SIMOX oxide observed in ellipsometer measurements are discussed comparatively with thermal oxide.

Features of Plasma Grown Native Oxides on Indium Phosphide

1992 ◽  
Vol 284 ◽  
Author(s):  
E. D. Belyakova ◽  
S. V. Belyakov ◽  
L. S. Berman ◽  
A. T. Gorelenok ◽  
I. N. Karimov ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Charge Density ◽  
Strong Dependence ◽  
Native Oxide ◽  
Rf Plasma ◽  
Plasma Oxidation ◽  
Oxide Charge ◽  
Native Oxides ◽  
Effective Oxide Charge ◽  
Mis Structures

ABSTRACTEllipsometry and XPS investigations of RF plasma grown native oxide and C-V measurements of its interface were performed.Strong dependence of the composition of the plasma grown native oxides and electric properties of MIS structures on the time of plasma treatment has been observed. The greater the content of stable polyphosphate phase of [InxPyOz] is in the native oxide composition, the better parameters of its interface with InP (NS 11 cm−2 eV−1 and the hysteresis of C-V characteristics≤0.2 V) and the lesser C-V drift after treatment may be achieved. Plasma oxidation results in creating a negative effective oxide charge density.

Enhancement of the Electrical Properties of BaTiO3 Films on GaAs Using Double Layer Structures

1994 ◽  
Vol 361 ◽  
Author(s):  
L.H. Chang ◽  
W.A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Charge Density ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Double Layer ◽  
Current Density ◽  
Dielectric Constants ◽  
Oxide Charge

ABSTRACTFerroelectric BaTiO3 thin films have been directly deposited on n-GaAs with carrier concentration of 5.3–8.2×1017/cm2. The BaTiO3 thin films with a thickness in the range of 80–120 nm were prepared by RF magnetron sputtering with a substrate temperature of 300°C. The as-deposited BaTiO3 films appeared to be amorphous with relative dielectric constants of around 15 and gave flat capacitance-voltage (C-V) curves, indicating poor interface properties and very high oxide charge density. After rapid thermal annealing (RTA) at 800°C for 60 sec, the relative dielectric constant of the BaTiO3 film increased to 82 and a sharp C-V curve was observed with oxide charge density of about 7×1012/cm2. However, the leakage current density increased from 4×10'11 A/cm2 for as-deposited BaTiO3 to 2×105 A/cm2 for RTA(800°C)-BaTiO3 at a field of 4×105 V/cm. By taking advantage of the best properties from both as-deposited amorphous BaTiO3 films (low leakage current density) and RTA(800°C)-BaTiO3 (high dielectric constant) the double layer structure was designed to enhance the electrical properties of the BaTiO3 films on GaAs. The most promising results in regards to the dielectric property and leakage current density are 76.5 and 9.7×109 A/cm2, respectively, for the double layer RTA(500°C)-BaTiO3 on RTA(800°C)-BaTiO3 structures.

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