Growth and characterization of high‐quality In0.32Ga0.68P layers on GaAs0.61P0.39substrates by liquid‐phase epitaxy
1992 ◽
Vol 35
(4)
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pp. 523-528
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1999 ◽
Vol 38
(Part 1, No. 3A)
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pp. 1314-1316
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2008 ◽
Vol 47
(9)
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pp. 7281-7284
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1987 ◽
Vol 5
(5)
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pp. 3048-3051
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Keyword(s):
2007 ◽
Vol 58
(3)
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pp. 307-311
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