Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation

1992 ◽  
Vol 35 (4) ◽  
pp. 579-585 ◽  
Author(s):  
L.L. Liou ◽  
C.I. Huang ◽  
J. Ebel
Keyword(s):  
Thermal Effects ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
One Dimensional ◽  
Numerical Studies ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Dimensional Simulation

The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor

2002 ◽  
Vol 743 ◽  
Author(s):  
Sarah Estrada ◽  
Andreas Stonas ◽  
Andrew Huntington ◽  
Huili Xing ◽  
Larry Coldren ◽  
...  
Keyword(s):  
High Mobility ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Fusion Temperature ◽  
Device Structure ◽  
Wafer Fusion ◽  
Current Voltage ◽  
Diffusion Effects ◽  
Current Voltage Characteristics

ABSTRACTWe describe the use of wafer fusion to form a heterojunction bipolar transistor (HBT), with an AlGaAs-GaAs emitter-base fused to a GaN collector. In this way, we hope to make use of both the high breakdown voltage of the GaN and the high mobility of the technologically more mature GaAs-based materials. This paper reports the first dc device characteristics of a wafer-fused transistor, and demonstrates the potential of wafer fusion for forming electronically active, lattice-mismatched heterojunctions. Devices utilized a thick base (0.15um) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100A/cm2. Devices were operated to VCE greater than 20V, with a low VCE offset (1V). Improvements in both device structure and wafer fusion conditions should provide further improvements in HBT performance. The HBT was wafer-fused at 750°C for one hour. Current-voltage characteristics of wafer-fused p-GaAs/n-GaN diodes suggest that the fusion temperature could be reduced to 500°C. Such a reduction in process temperature should mitigate detrimental diffusion effects in future HBTs.

Fabrication of One-dimensional Silicon Nano-wires Based on Proximity Effects of Electron-beam Lithography

2005 ◽  
Vol 862 ◽  
Author(s):  
S. F. Hu ◽  
C. L. Sung
Keyword(s):  
Electron Beam ◽  
Thermal Effects ◽  
Silicon Nanowire ◽  
Silicon Layer ◽  
Proximity Effects ◽  
One Dimensional ◽  
Current Voltage ◽  
Gate Potential ◽  
Current Voltage Characteristics ◽  
Nano Wires

AbstractOne-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

scholarly journals GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

2021 ◽  
Author(s):  
Marius Zehender ◽  
Simon Svatek ◽  
Myles Steiner ◽  
Ivan Garcia ◽  
Pablo Garcia-Linares ◽  
...  
Keyword(s):  
Solar Cell ◽  
Low Cost ◽  
Open Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Power Extraction ◽  
Current Voltage ◽  
Double Junction ◽  
New Perspective ◽  
Interconnecting Layers

Abstract We demonstrate a heterojunction bipolar transistor solar cell (HBTSC), a device that exhibits the performance of a double-junction solar cell in a more compact npn (or pnp) semiconductor structure. The HBTSC concept has the advantages of being a three-terminal device, such as low spectral sensitivity and high tolerance to non-optimal band-gap energies, while it has a lower fabrication and operation complexity than other multi-terminal architectures: it can produce independent power extraction from the two junctions without the need for extra isolating or interconnecting layers between them. The two junctions in our proof-of-concept HBTSC prototype, which is made of epitaxial GaInP/GaAs, exhibit independent current-voltage characteristics under AM1.5G illumination, with respective open-circuit voltages of 1.33 and 0.95 V. The HBTSC opens a new perspective in the understanding of multi-junction devices, and it is an excellent candidate for the application of low-cost fabrication techniques, and for the implementation of III-V-on-silicon tandems.

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