Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

2002 ◽  
Vol 80 (20) ◽  
pp. 3841-3843 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Base Layer ◽  
Emitter Current ◽  
Low Resistance ◽  
Current Voltage ◽  
Current Voltage Characteristics

The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor

2002 ◽  
Vol 743 ◽  
Author(s):  
Sarah Estrada ◽  
Andreas Stonas ◽  
Andrew Huntington ◽  
Huili Xing ◽  
Larry Coldren ◽  
...  
Keyword(s):  
High Mobility ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Fusion Temperature ◽  
Device Structure ◽  
Wafer Fusion ◽  
Current Voltage ◽  
Diffusion Effects ◽  
Current Voltage Characteristics

ABSTRACTWe describe the use of wafer fusion to form a heterojunction bipolar transistor (HBT), with an AlGaAs-GaAs emitter-base fused to a GaN collector. In this way, we hope to make use of both the high breakdown voltage of the GaN and the high mobility of the technologically more mature GaAs-based materials. This paper reports the first dc device characteristics of a wafer-fused transistor, and demonstrates the potential of wafer fusion for forming electronically active, lattice-mismatched heterojunctions. Devices utilized a thick base (0.15um) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100A/cm2. Devices were operated to VCE greater than 20V, with a low VCE offset (1V). Improvements in both device structure and wafer fusion conditions should provide further improvements in HBT performance. The HBT was wafer-fused at 750°C for one hour. Current-voltage characteristics of wafer-fused p-GaAs/n-GaN diodes suggest that the fusion temperature could be reduced to 500°C. Such a reduction in process temperature should mitigate detrimental diffusion effects in future HBTs.

High common-emitter current gains obtained by pnp GaN bipolar junction transistors

2001 ◽  
Vol 693 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Bipolar Junction Transistors ◽  
Base Thickness ◽  
Emitter Current ◽  
Base Current ◽  
Common Base ◽  
Current Voltage ◽  
Device Structures ◽  
Maximum Current ◽  
Current Voltage Characteristics ◽  
The Common

AbstractWe fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

scholarly journals GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

2021 ◽  
Author(s):  
Marius Zehender ◽  
Simon Svatek ◽  
Myles Steiner ◽  
Ivan Garcia ◽  
Pablo Garcia-Linares ◽  
...  
Keyword(s):  
Solar Cell ◽  
Low Cost ◽  
Open Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Power Extraction ◽  
Current Voltage ◽  
Double Junction ◽  
New Perspective ◽  
Interconnecting Layers

Abstract We demonstrate a heterojunction bipolar transistor solar cell (HBTSC), a device that exhibits the performance of a double-junction solar cell in a more compact npn (or pnp) semiconductor structure. The HBTSC concept has the advantages of being a three-terminal device, such as low spectral sensitivity and high tolerance to non-optimal band-gap energies, while it has a lower fabrication and operation complexity than other multi-terminal architectures: it can produce independent power extraction from the two junctions without the need for extra isolating or interconnecting layers between them. The two junctions in our proof-of-concept HBTSC prototype, which is made of epitaxial GaInP/GaAs, exhibit independent current-voltage characteristics under AM1.5G illumination, with respective open-circuit voltages of 1.33 and 0.95 V. The HBTSC opens a new perspective in the understanding of multi-junction devices, and it is an excellent candidate for the application of low-cost fabrication techniques, and for the implementation of III-V-on-silicon tandems.

scholarly journals Мощные диоды Шоттки с участком отрицательного дифференциального сопротивления на вольт-амперной характеристике

2021 ◽  
Vol 55 (1) ◽  
pp. 75
Author(s):  
А.Г. Тандоев ◽  
Т.Т. Мнацаканов ◽  
С.Н. Юрков
Keyword(s):  
Schottky Diode ◽  
Carrier Transport ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Analytical Investigation ◽  
Base Layer ◽  
Neutral Drift ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

It is shown that at high current densities the carrier transport in base layer of Schottky diodes in addition to commonly accepted diffusive and drift currents is defined by recently discovered diffusion stimulated by quasi-neutral drift (DSQD). The influence of this recently discovered component of current on current-voltage characteristics of Schottky diode has been investigated. It was shown that in case if the ratio of base width $W$ to ambipolar diffusive length $L$ is higher than 1 ($W/L>1$) a part with negative differential resistance appears on the current-voltage characteristics of Schottky diode. The results of analytical investigation are confirmed by numerical calculation using INVESTIGATION program.

Low tensile strain GaInAs:uid/GaAs:C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer

2000 ◽  
Vol 221 (1-4) ◽  
pp. 717-721 ◽  
Author(s):  
M.-A. di Forte-Poisson ◽  
S. Bernard ◽  
L. Teisseire ◽  
C. Brylinski ◽  
S. Cassette ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Base Layer

Copper-Based Ohmic Contacts For The SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure

1999 ◽  
Vol 564 ◽  
Author(s):  
K. Das ◽  
S. A. Alterovitz
Keyword(s):  
Surface Layer ◽  
Sheet Resistance ◽  
Multilayer Structure ◽  
Ohmic Contacts ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Low Resistance ◽  
Resistance Surface ◽  
Specific Contact ◽  
P Type

AbstractA Cu-based metallization scheme has been studied for establishing low resistance contacts for a Si/SiGe/Si heterojunction bipolar transistor (HBT) structure. As-grown doped layers were further implanted with BF2 and As ions for the p-type base and n-type emitter layers, respectively, in order to produce a low sheet resistance surface layer. Contacts were metallized using an e-beam deposited multilayer structure of Ti/Cu/Ti/Al. Specific contact resistances of the order of 10−7 Ω cm2 or lower were obtained.

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