Fabrication of One-dimensional Silicon Nano-wires Based on Proximity Effects of Electron-beam Lithography
Keyword(s):
AbstractOne-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.
1992 ◽
Vol 35
(4)
◽
pp. 579-585
◽
Keyword(s):
1996 ◽
Vol 73
(1)
◽
pp. 17-26
◽
Keyword(s):
2004 ◽
Vol 130
(1-2)
◽
pp. 111-114
◽
1977 ◽
Vol 20
(9)
◽
pp. 781-788
◽
2007 ◽
Vol 42
(4)
◽
pp. 158-161
◽
Keyword(s):