Analytical expressions for the drift velocity of hot charge carriers in silicon

1992 ◽  
Vol 35 (4) ◽  
pp. 593-597 ◽  
Author(s):  
S.R. Shukla ◽  
M.N. Sen
Keyword(s):  
Drift Velocity ◽  
Charge Carriers ◽  
Analytical Expressions

scholarly journals Квантовый транспорт в полупроводниковом нанослое с учетом поверхностного рассеяния носителей заряда

2021 ◽  
Vol 55 (9) ◽  
pp. 789
Author(s):  
И.А. Кузнецова ◽  
О.В. Савенко ◽  
Д.Н. Романов
Keyword(s):  
Energy Surface ◽  
Chemical Potential ◽  
Silicon Layer ◽  
Transport Processes ◽  
Charge Carriers ◽  
Axis Parallel ◽  
Ellipsoid Of Revolution ◽  
De Broglie Wavelength ◽  
Analytical Expressions ◽  
Degenerate Electron Gas

The problem of the conductivity of a thin conductive nanolayer is solved taking into account the quantum theory of transport processes. The layer thickness can be comparable to or less than the de Broglie wavelength of charge carriers. The constant-energy surface has the form of an ellipsoid of revolution with the main axis parallel to the layer plane. Analytical expressions are obtained for the conductivity tensor components as a function of dimensionless thickness, chemical potential, ellipticity parameter, and surface roughness parameters. The conductivity analysis for the limiting cases of a degenerate and non-degenerate electron gas are conducted. The results are compared with known experimental data for a silicon layer.

Excess Electrons and Positive Charge Carriers in Liquid Methane. I

1973 ◽  
Vol 28 (3-4) ◽  
pp. 511-518 ◽  
Author(s):  
George Bakale ◽  
Werner F. Schmidt
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Drift Velocity ◽  
Positive Charge ◽  
Charge Carriers ◽  
Excess Electrons ◽  
Radiation Induced ◽  
Liquid Methane ◽  
Increasing Temperature ◽  
Field Strengths

AbstractThe drift velocities of radiation-induced excess electrons and positive charge carriers in liquid methane were measured at different electric field strengths and several temperatures. For the excess electrons the drift velocity increases up to 1.5 kV cm-1 proportional to the electric field strength and a mobility of (400±50) cm2 V-1 s-1 at T = 111 °K was obtained. Above 1.5 kV cm-1 the drift velocity varies with E½. The temperature coefficient of the mobility is negative. For the positive charge carriers the measurements were carried out up to electric field strengths of 50 kV cm-1 and the drift velocity remained proportional to the field giving a mobility of (2.5 ± 0.5) · 10-3 cm2 V-1 s-1 at 7 = 111 °K. The mobility increased with increasing temperature. The reaction of excess electrons with oxygen was also studied and a rate constant of 8.4 · 1011 l mole-1 s-1 was obtained.

scholarly journals A stochastic model for bacteria-driven micro-swimmers

Soft Matter ◽  
2019 ◽  
Vol 15 (12) ◽  
pp. 2605-2616 ◽  
Author(s):  
Christian Esparza López ◽  
Albane Théry ◽  
Eric Lauga
Keyword(s):  
Diffusion Coefficient ◽  
Stochastic Model ◽  
Drift Velocity ◽  
Analytical Expressions

We derive analytical expressions for the diffusion coefficient and the chemotactic drift velocity of bacteria-driven micro-swimmers.

scholarly journals Внутризонное поглощение излучения свободными дырками в квантовых ямах GaAs/InGaAs с учетом несферичности kP-гамильтониана

2019 ◽  
Vol 45 (10) ◽  
pp. 9
Author(s):  
Н.В. Павлов ◽  
Г.Г. Зегря
Keyword(s):  
Absorption Coefficient ◽  
Quantum Wells ◽  
Incident Radiation ◽  
Charge Carriers ◽  
Energy Spectra ◽  
Maximum Absorption ◽  
Radiation Absorption ◽  
Elastic Stresses ◽  
Analytical Expressions

The system of Kane equations is derived and solved with taking into account the elastic stresses and the nonsphericity of the kP Hamiltonian. Analytical expressions for the energy spectra of charge carriers are obtained. The radiation absorption coefficient by heavy holes with transition to the spin-split zone in GaAs/InGaAs quantum wells was calculated for different directions of polarization of the incident radiation. It was shown that for the GaAs/InGaAs heterostructure, the maximum absorption will be observed when the QW width is 4–6 nm.

Exploiting the drift velocity of charge carriers

1987 ◽  
Vol 55 (9) ◽  
pp. 776-776
Author(s):  
George Galeczki
Keyword(s):  
Drift Velocity ◽  
Charge Carriers

Measurement of the drift velocity of charge carriers in mercuric iodide

1974 ◽  
Vol 45 (11) ◽  
pp. 5074-5076 ◽  
Author(s):  
R. Minder ◽  
G. Majni ◽  
C. Canali ◽  
G. Ottaviani ◽  
R. Stuck ◽  
...  
Keyword(s):  
Drift Velocity ◽  
Charge Carriers ◽  
Mercuric Iodide
Sign in / Sign up

Export Citation Format

Share Document