and heterojunction bipolar transistors with a super heavily carbon-doped base grown by metalorganic molecular beam epitaxy
1995 ◽
Vol 38
(9)
◽
pp. 1675-1678
◽
1995 ◽
Vol 150
◽
pp. 585-590
◽
1997 ◽
Vol 36
(Part 1, No. 3B)
◽
pp. 1866-1868
◽
2004 ◽
Vol 22
(5)
◽
pp. 2499
1993 ◽
Vol 32
(Part 2, No. 3A)
◽
pp. L309-L311
◽
1994 ◽
Vol 136
(1-4)
◽
pp. 11-17
◽
1995 ◽
Vol 13
(2)
◽
pp. 667
◽
2007 ◽
Vol 301-302
◽
pp. 212-216
◽
Keyword(s):
1996 ◽