Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors

1995 ◽  
Vol 150 ◽  
pp. 585-590 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Toshiaki Azuma ◽  
Fumihiko Fukuchi ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy

InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base

1992 ◽  
Vol 13 (5) ◽  
pp. 247-249 ◽  
Author(s):  
R.C. Gee ◽  
T.-P. Chin ◽  
C.W. Tu ◽  
P.M. Asbeck ◽  
C.L. Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

1992 ◽  
Vol 282 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
R. Esagui
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source ◽  
High Injection ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Metal Organic

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

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