Metal-organic vapour phase epitaxy: A thin film technology for large-scale production of high power GaAs/GaAlAs laser diodes

1989 ◽  
Vol 175 ◽  
pp. 213-220 ◽  
Author(s):  
J. Luft ◽  
E. Wudy
1996 ◽  
Vol 32 (16) ◽  
pp. 1491
Author(s):  
J.S. Roberts ◽  
C.J. Hamilton ◽  
K. McIlvaney ◽  
J.H. Marsh

MRS Advances ◽  
2020 ◽  
Vol 5 (31-32) ◽  
pp. 1625-1633
Author(s):  
Annika Grundmann ◽  
Clifford McAleese ◽  
Ben Richard Conran ◽  
Andrew Pakes ◽  
Dominik Andrzejewski ◽  
...  

ABSTRACTMost publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.


1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.


2021 ◽  
Vol 303 ◽  
pp. 122547
Author(s):  
Tong Gao ◽  
Hui-Juan Tang ◽  
Shu-Yi Zhang ◽  
Jian-Wei Cao ◽  
Yi-Nong Wu ◽  
...  

1985 ◽  
Vol 63 (6) ◽  
pp. 732-735 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
J. Auclair

Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.


2020 ◽  
Author(s):  
Diletta Morelli Venturi ◽  
Filippo Campana ◽  
Fabio Marmottini ◽  
Ferdinando Costantino ◽  
Luigi Vaccaro

<p>Zirconium based Metal-Organic Framework UiO-66 is to date considered one of the benchmark compound among stable MOFs and it has attracted a huge attention for its employment in many strategic applications. Large scale production of UiO-66 for industrial purposes requires the use of safe and green solvents, fulfilling the green chemistry principles and able to replace the use of <i>N,N</i>-Dimethyl-Formamide (DMF), which, despite its toxicity, is still considered the most efficient solvent for obtaining UiO-66 of high quality. Herein we report on a survey of about 40 different solvents with different polarity, boiling point and acidity, used for the laboratory scale synthesis of high quality UiO-66 crystals. The solvents were chosen according the European REACH Regulation 1907/2006 among those having low cost, low toxicity and fully biodegradable. Concerning MOF synthesis, the relevant parameters chosen for establishing the quality of the results obtained are the degree are the crystallinity, microporosity and specific surface area, yield and solvent recyclability. Taking into account also the chemical physical properties of all the solvents, a color code was assigned in order to give a final green assessment for the UiO-66 synthesis. Defectivity of the obtained products, the use of acidic modulators and the use of alternative Zr-salts have been also taken into consideration. Preliminary results lead to conclude that GVL (γ-valerolactone) is among the most promising solvents for replacing DMF in UiO-66 MOF synthesis. </p>


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