Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in the potentiostatic regime

1995 ◽  
Vol 263 (2) ◽  
pp. 238-242 ◽  
Author(s):  
S. Billat ◽  
F. Gaspard ◽  
R. Hérino ◽  
M. Ligeon ◽  
F. Muller ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Oxidation ◽  
Heavily Doped ◽  
P Type ◽  
Potentiostatic Regime

scholarly journals Macropore Formation and Pore Morphology Characterization of Heavily Doped p-Type Porous Silicon

2019 ◽  
Vol 166 (2) ◽  
pp. B9-B12 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Paula Martínez-Pérez ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Pore Morphology ◽  
Heavily Doped ◽  
P Type ◽  
Morphology Characterization ◽  
Macropore Formation

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

Formation of Porous Silicon Layers on Insulating Substrate for Microbridge – Type Sensor Applications

2004 ◽  
Vol 828 ◽  
Author(s):  
Sergey Ya. Andrushin ◽  
Leonid A. Balagurov ◽  
Sue C. Bayliss ◽  
Galina V. Liberova ◽  
Elena A. Petrova ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Polycrystalline Silicon ◽  
Sacrificial Layer ◽  
Fabrication Process ◽  
Formation Processes ◽  
Sensor Applications ◽  
Heavily Doped ◽  
P Type

ABSTRACTFormation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.

Temperature effect on the roughness of the formation interface of p-type porous silicon

1998 ◽  
Vol 84 (6) ◽  
pp. 3129-3133 ◽  
Author(s):  
S. Setzu ◽  
G. Lérondel ◽  
R. Romestain
Keyword(s):  
Porous Silicon ◽  
Temperature Effect ◽  
P Type

Analysis of Defects in Heavily-Doped MBE-GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
C.B. Carter ◽  
D.M. Desimone ◽  
H.T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Liquid Phase ◽  
Molecular Beam ◽  
Type Material ◽  
Grown Layer ◽  
Defect Clusters ◽  
Complex Defect ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Very High

ABSTRACTGaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

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