Characterization of thin film thickness and density by low angle x-ray interference

Vacuum ◽  
1967 ◽  
Vol 17 (12) ◽  
pp. 679
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Thin Film Thickness ◽  
X Ray

Determination of the polymeric thin film thickness by energy dispersive X-ray fluorescence and multivariate analysis

2020 ◽  
Vol 167 ◽  
pp. 105818 ◽  
Author(s):  
Eduardo de Almeida ◽  
Fábio L. Melquiades ◽  
João P.R. Marques ◽  
Eva Marguí ◽  
Hudson W.P. de Carvalho
Keyword(s):  
Thin Film ◽  
Multivariate Analysis ◽  
Film Thickness ◽  
Energy Dispersive ◽  
Thin Film Thickness ◽  
X Ray ◽  
Polymeric Thin Film

A study of X-ray reflectivity data analysis methods for thin film thickness determination

1996 ◽  
Vol 11 (2) ◽  
pp. 114-116 ◽  
Author(s):  
D. T. Brower ◽  
R. E. Revay ◽  
T. C. Huang
Keyword(s):  
Thin Film ◽  
Fourier Transform ◽  
Film Thickness ◽  
Curve Fitting ◽  
Thin Film Thickness ◽  
X Ray ◽  
Peak Separation ◽  
Fitting Method ◽  
The Fourier Transform ◽  
Curve Fitting Method

The determination of thin film thickness by four X-ray reflectivity methods (namely, the peak separation, the Fourier transform, the modified Bragg equation, and the curve-fitting methods) has been studied. An analysis of SrS and BaF2 thin films showed thickness values determined by the methods agreed to within 4%. The curve-fitting method had the highest accuracy but was time-consuming. The peak separation, the Fourier transform, and the modified Bragg equation methods are considerably faster and, on average, gave 2.8%, 0.9%, and 0.2% larger thicknesses than those of the curve-fitting method.

Growth and Characterization of GaN Nano-Column Grown on Si (111) Substrate Using Au+Ga Alloy Seeding Method by MOCVD

2007 ◽  
Vol 124-126 ◽  
pp. 113-118
Author(s):  
Byung Young Shim ◽  
Eun A Ko ◽  
Dong Wook Kim ◽  
Cheul Ro Lee
Keyword(s):  
Thin Film ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Thin Film Thickness ◽  
One Dimensional ◽  
X Ray ◽  
Nano Structures ◽  
Seeding Method ◽  
Au Thin Film

We have studied the Au+Ga alloy seeding method. Single-crystal GaN nano-column arrays were grown using metalorganic chemical vapor deposition (MOCVD) and their properties were investigated as a function of the growth parameters and Au thin film thickness. Au-coated Si(111) substrates were used for the growth of GaN nano-columns. The diameter and length of as-grown nano-column ranged from 100 to 500 nm and 1 to 5 μm, respectively. The morphology of the columns was investigated using scanning electron microscopy. Energy dispersive X-ray spectroscopy and photoluminescence were used for evaluating of its qualitative analysis and to evaluate the optical properties, respectively. Two important growth parameters were considered, the thickness of the Au thin film and the gallium flow rate. The density and tendency of the nano-columns depend on each of these growth parameters. It is believed that the catalytic activity of gold is determined by the size of the Au+Ga solid solution particles, and smaller Au+Ga clusters showed significant reactivity in the growth of one-dimensional GaN nano structures.

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