Effects of substrate temperature on the annealing behavior of residual defects in high-dose As+ implanted (001) Si

1991 ◽  
Vol 59-60 ◽  
pp. 1037-1040 ◽  
Author(s):  
S.N. Hsu ◽  
L.J. Chen ◽  
S.S. Lau
Keyword(s):  
Substrate Temperature ◽  
High Dose ◽  
Annealing Behavior

Ion Implantation of KnbO3 and LiNbO3 at Elevated Temperatures

1988 ◽  
Vol 128 ◽  
Author(s):  
C H. Buchal ◽  
R. Irmscher ◽  
P. Günter
Keyword(s):  
Ion Implantation ◽  
Dynamic Recrystallization ◽  
Substrate Temperature ◽  
Elevated Temperatures ◽  
High Dose ◽  
Single Crystalline ◽  
First Time ◽  
High Dose Implantation

ABSTRACTIon implantation, annealing and channeling of single crystalline samples of KnbO3 and LiNbO3 have been studied. Raising the substrate temperature above 600 K, greatly increases the tolerance of the crystals for high-dose implantation. In LiNbO3 dynamic recrystallization has been observed for the first time.

Recrystallization of ion-implanted α-SiC

1987 ◽  
Vol 2 (1) ◽  
pp. 107-116 ◽  
Author(s):  
H. G. Bohn ◽  
J. M. Williams ◽  
C. J. McHargue ◽  
G. M. Begun
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Temperature Interval ◽  
High Dose ◽  
Low Doses ◽  
Surface Layers ◽  
Annealing Behavior ◽  
Narrow Temperature Interval ◽  
Amorphous Surface ◽  
Ion Implanted

The annealing behavior of ion-implanted α-SiC single crystal was determined for samples implanted with 62 keV 14N to doses of 5.5X1014/cm2 and 8.0X1016/cm2 and with 260 keV 52Cr to doses of 1.5X1014/cm2 and 1.0X1016/cm2. The high-dose samples formed amorphous surface layers to depths of 0.17 μm (N) and 0.28 μm (Cr), while for the low doses only highly damaged but not randomized regions were formed. The samples were isochronically annealed up to 1600°C, holding each temperature for 10 min. The remaining damage was analyzed by Rutherford backscattering of 2 MeV He+, Raman scattering, and electron channeling. About 15% of the width of the amorphous layers regrew cpitaxially from the underlying undamaged material up to 1500°C, above which the damage annealed rapidly in a narrow temperature interval. The damage in the crystalline samples annealed linearly with temperature and was unmeasurable above 1000°C.

High-dose helium-implanted single-crystal silicon: Annealing behavior

1998 ◽  
Vol 84 (9) ◽  
pp. 4802-4808 ◽  
Author(s):  
R. Tonini ◽  
F. Corni ◽  
S. Frabboni ◽  
G. Ottaviani ◽  
G. F. Cerofolini
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Annealing Behavior

Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiC

1998 ◽  
Vol 72 (16) ◽  
pp. 2026-2028 ◽  
Author(s):  
S. Seshadri ◽  
G. W. Eldridge ◽  
A. K. Agarwal
Keyword(s):  
High Dose ◽  
Annealing Behavior

Annealing Behavior of Crystalline Si Implanted with High Dose of Protons

1998 ◽  
Vol 165 (2) ◽  
pp. 361-365 ◽  
Author(s):  
Miao Zhang ◽  
Lianwei Wang ◽  
Zuyao Zhou ◽  
Zixin Lin ◽  
Chenglu Lin
Keyword(s):  
High Dose ◽  
Annealing Behavior
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