Recrystallization of ion-implanted α-SiC

1987 ◽  
Vol 2 (1) ◽  
pp. 107-116 ◽  
Author(s):  
H. G. Bohn ◽  
J. M. Williams ◽  
C. J. McHargue ◽  
G. M. Begun
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Temperature Interval ◽  
High Dose ◽  
Low Doses ◽  
Surface Layers ◽  
Annealing Behavior ◽  
Narrow Temperature Interval ◽  
Amorphous Surface ◽  
Ion Implanted

The annealing behavior of ion-implanted α-SiC single crystal was determined for samples implanted with 62 keV 14N to doses of 5.5X1014/cm2 and 8.0X1016/cm2 and with 260 keV 52Cr to doses of 1.5X1014/cm2 and 1.0X1016/cm2. The high-dose samples formed amorphous surface layers to depths of 0.17 μm (N) and 0.28 μm (Cr), while for the low doses only highly damaged but not randomized regions were formed. The samples were isochronically annealed up to 1600°C, holding each temperature for 10 min. The remaining damage was analyzed by Rutherford backscattering of 2 MeV He+, Raman scattering, and electron channeling. About 15% of the width of the amorphous layers regrew cpitaxially from the underlying undamaged material up to 1500°C, above which the damage annealed rapidly in a narrow temperature interval. The damage in the crystalline samples annealed linearly with temperature and was unmeasurable above 1000°C.

Crystallisation and Diffusion in Oriented Sapphire Amorphised by Zinc Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
L. A. Bunn ◽  
D. K. Sood
Keyword(s):  
Epitaxial Growth ◽  
Zinc Ion ◽  
High Dose ◽  
Low Doses ◽  
Surface Layers ◽  
Rapid Diffusion ◽  
High Doses ◽  
Amorphous Surface ◽  
And Diffusion ◽  
Post Implantation

AbstractHigh dose zinc implantation (1×1016 to 6×1016 ions/cm2) into c-axis sapphire at 770K produces amorphous surface layers. Post-implantation annealing at temperatures at and above 800°C show that the modes of recrystallisation are strongly dependant on ion dose. At low doses formation of crystallites of α and γ phase Al2O3 is seen, with no evidence of any planar epitaxial growth at the original crystalline-amorphous interface. The zinc is seen to diffuse isotropically within the crystallised layer and becomes partially substitutional within the crystallites. At high doses, however, the formation of crystallites is inhibited, with the layer remaining amorphous. A more rapid diffusion of zinc is seen in the amorphous Al2O3, with some of the zinc being lost at the surface.

scholarly journals Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
L. L. Meisner ◽  
A. I. Lotkov ◽  
V. A. Matveeva ◽  
L. V. Artemieva ◽  
S. N. Meisner ◽  
...  
Keyword(s):  
Stem Cells ◽  
Flow Cytometry ◽  
Mesenchymal Stem Cells ◽  
Ion Implantation ◽  
Cell Counting ◽  
High Dose ◽  
Surface Layers ◽  
Test Flow ◽  
Ion Implanted

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

SOFT PHONON RESISTIVITY IN CONDUCTIVE SrTiO3

2000 ◽  
Vol 14 (12) ◽  
pp. 437-446
Author(s):  
K. SUGAWARA
Keyword(s):  
Electrical Resistivity ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Potential Application ◽  
Low Dose ◽  
High Dose ◽  
Resistivity Measurements ◽  
Ion Implanted

Electrical resistivity due to soft phonon (SPR) is proposed. To test SPR, resistivity measurements have been carried out for conductive single-crystal samples of the SrTiO 3 system; Sr 1-x La x TiO 3, SrTi 1-y Nb y O 3 and SrTiO 3 implanted with Fe, Cr or B. Experiments reveal a weak SPR for Sr 1-x La x TiO 3, but no noticeable SPR was found for SrTi 1-y Nb y O 3. Resistivity measurements on the ion-implanted specimens reveal rather profound SPR for low-dose (semiconducting) specimens but weak SPR for high-dose (metallic) specimens. These results indicate that the magnitude of SPR may be carrier-concentration dependent or crystallinity dependent. A possible profound SPR is proposed for SrTiO 3 under optical illumination and superlattices. Also proposed is a potential application of SPR to soft-phonon devices (SPD).

The effect of ion induced damage on the hardness, wear, and friction of zirconia

1990 ◽  
Vol 5 (2) ◽  
pp. 385-391 ◽  
Author(s):  
E. L. Fleischer ◽  
W. Hertl ◽  
T. L. Alford ◽  
P. Børgesen ◽  
J. W. Mayer
Keyword(s):  
Single Crystal ◽  
Friction And Wear ◽  
Inert Gas ◽  
High Dose ◽  
Low Doses ◽  
A Value ◽  
Wear And Friction ◽  
Knoop Microhardness ◽  
Pin On Disk ◽  
Ion Species

Microhardness measurements were carried out on ion implanted single crystal Y2O3 stabilized cubic ZrO2. Inert gas ions (Ne, Ar, Xe) and N, Si, Ti, and W were implanted up to fluences of 3 × 1017 ions/cm2. Implantation energies were selected to give equivalent ranges. Comparison of the Knoop microhardness values of ZrO2 implanted with various species over a range of fluences showed that the principal variable causing hardness changes is damage energy and not the ion fluence nor the ion species. For all implants studied, the hardness versus damage energy gives a unified plot. At low doses the hardness rises with increasing deposited damage energy to a value 15% higher than that of unimplanted zirconia. With additional damage the hardness drops to a value 15% lower than that of the unimplanted zirconia. Friction and wear measurements in a pin-on-disk assembly showed very different behavior for high dose versus unimplanted ZrO2. The unimplanted samples showed debris with an associated rise in friction. The implanted system showed much less debris and a constant value of friction even after 10 000 cycles.

Raman scattering and photoluminescence of As ion-implanted ZnO single crystal

2004 ◽  
Vol 96 (1) ◽  
pp. 175-179 ◽  
Author(s):  
T. S. Jeong ◽  
M. S. Han ◽  
C. J. Youn ◽  
Y. S. Park
Keyword(s):  
Raman Scattering ◽  
Single Crystal ◽  
Zno Single Crystal ◽  
Ion Implanted

EXAFS Measurements Of Ion-Implanted Amorphous Surface Layers

1986 ◽  
Author(s):  
C. E. Bouldin ◽  
R. A. Forman ◽  
M. I. Bell ◽  
E. P. Donovan ◽  
G. K. Hubler
Keyword(s):  
Surface Layers ◽  
Amorphous Surface ◽  
Ion Implanted

Structure of Ion-Implanted Silicon After Electron Beam Annealing

1980 ◽  
Vol 38 ◽  
pp. 306-307
Author(s):  
P. J. Smith ◽  
J. M. Leas ◽  
A. T. Leighton
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Amorphous Layer ◽  
High Dose ◽  
Device Structure ◽  
Crystal Silicon ◽  
Crystal Material ◽  
Ion Implanted

High dose ion-implantation into single crystal silicon produces an amorphous layer which must be removed by high temperature annealing. Laser and electron beam annealing, which bring only the top surface of the silicon to a high temperature, can produce more perfect single crystal material than conventional thermal annealing while avoiding the disadvantages of heating the entire wafer. We have found that electron beam annealing of oxide- defined silicon devices can produce dislocation-free single crystal material from amorphous ion-implanted layers, but the results are strongly dependent on both the electron beam parameters and the initial device structure.

Ion Implantation and Annealing of Crystalline Oxides

1985 ◽  
Vol 60 ◽  
Author(s):  
C. W. White ◽  
P. S. Sklad ◽  
L. A. Boatner ◽  
G. C. Farlow ◽  
C. J. McHargue ◽  
...  
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Solid Phase ◽  
Planar Interface ◽  
Solid Phase Epitaxy ◽  
Surface Layers ◽  
Α Phase ◽  
Amorphous Surface ◽  
Crystalline Oxides

AbstractThe crystallization of amorphous surface layers produced by ion implantation of single-crystal α-Al2O3 and CaTiO3 are discussed. During annealing, amorphous A12O3 converts first to the α-phase. The crystallized γ then transforms to the a-phase by the motion of a well-defined planar interface. The temperature dependence of the velocity of the γ/α interface has been measured and is characterized by an activation energy of ∼3.6 eV. In CaTiO3, crystallization of the amorphous phase takes place by solid-phase epitaxy. The velocity of the amorphous/crystal interface is characterized by an activation energy of 1.3 eV.

scholarly journals Intensive study on structure transformation of muscovite single crystal under high-dose γ -ray irradiation and mechanism speculation

2019 ◽  
Vol 6 (7) ◽  
pp. 190594 ◽  
Author(s):  
Honglong Wang ◽  
Yaping Sun ◽  
Jian Chu ◽  
Xu Wang ◽  
Ming Zhang
Keyword(s):  
Single Crystal ◽  
Chemical Structure ◽  
Defect Formation ◽  
High Dose ◽  
Low Doses ◽  
Lattice Plane ◽  
Structure Transformation ◽  
Intensive Study ◽  
Dose Irradiation ◽  
High Doses

Intensive study on structure transformation of muscovite single crystal under high-dose γ -ray irradiation is essential for its use in irradiation detection and also beneficial for mechanism cognition on defect formation within a matrix of clay used in the disposal of high-level radioactive waste (HLRW). In this work, muscovite single crystal was irradiated with Co-60 γ ray in air at a dose rate of 54 Gy min −1 with doses of 0–1000 kGy. Then, structure transformation and mechanism were explored by Raman spectrum, Fourier-transform infrared spectrum, X-ray diffraction, thermogravimetric analysis, CA, scanning electron microscope and atomic force microscopy. The main results show that variations in the chemical/crystalline structure are dose-dependent. Low-dose irradiation sufficiently destroyed the structure, removing Si–OH, thus declining hydrophilicity. With dose increase up to 100 kGy, CA increased from 20° to 40°. Except for hydrophilicity variation, shrink occurred in the (004) lattice plane which later recovered; the variation range at 500 kGy irradiation was 0.5% close to 0.02 Å. The main mechanisms involved were framework break and H 2 O radiolysis. Framework break results in Si–OH removal and H 2 O radiolysis results in extra OH introduction. The extra introduced OH probably results in Si–OH bond regeneration, lattice plane shrink and recovered surface hydrophilicity. The importance of framework break and H 2 O radiolysis on structure transformation is dose-dependence. At low doses, framework break seems more important while at high doses H 2 O radiolysis is important. Generally, variations in the chemical structure and surface property are nonlinear and less at high doses. This indicates using the chemical structure or surface property variation to describe irradiation is correct at low doses but not at high doses. This finding is meaningful for realizing whether muscovite is suitable for detecting high-dose irradiation or not, and mechanism exploration is efficient for identifying the procedure for defect formation within the matrix of clay used in disposal HLRW in practice.

High-dose helium-implanted single-crystal silicon: Annealing behavior

1998 ◽  
Vol 84 (9) ◽  
pp. 4802-4808 ◽  
Author(s):  
R. Tonini ◽  
F. Corni ◽  
S. Frabboni ◽  
G. Ottaviani ◽  
G. F. Cerofolini
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Annealing Behavior
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