Study of oxygen self-diffusion in oxides by ion beam techniques: comparison between nuclear reaction analysis and SIMS

1993 ◽  
Vol 73 (1) ◽  
pp. 85-89 ◽  
Author(s):  
A.C.S. Sabioni ◽  
F.L. Freire ◽  
C.V.Barros Leite ◽  
B.A. Amami ◽  
C. Dolin ◽  
...  
Keyword(s):  
Nuclear Reaction ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Self Diffusion

scholarly journals In-Situ Ion Beam Measurements of Deuterium Loading in Thin Foil Electrochemical Cells

1989 ◽  
Vol 157 ◽  
Author(s):  
J.A. Knapp ◽  
T.R. Guilinger ◽  
M.J. Kelly ◽  
D. Walsh ◽  
B.L. Doyle
Keyword(s):  
Nuclear Reaction ◽  
Ion Beam ◽  
Cold Fusion ◽  
Thin Foil ◽  
Nuclear Reaction Analysis ◽  
Deuterium Content ◽  
Electrochemical Cells ◽  
External Beam

ABSTRACTA key element of recent assertions of "cold fusion" has been the claim that electrochemical loading of deuterium into Pd electrodes can produce D:Pd levels exceeding 1:1. Using external beam nuclear reaction analysis of Pd foil electrodes in operating electrochemical cells, we have directly monitored deuterium content in-situ. No conditions were found which resulted in loadings higher than ∼0.9.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Materials Analysis with High Energy Ion Beams Part II: Channeling and Other Techniques

MRS Bulletin ◽  
1987 ◽  
Vol 12 (6) ◽  
pp. 30-34 ◽  
Author(s):  
H-J. Gossmann ◽  
L.C. Feldman
Keyword(s):  
Nuclear Reaction ◽  
Ion Beam ◽  
Light Element ◽  
High Energy ◽  
Ion Beams ◽  
Nuclear Reaction Analysis ◽  
Materials Analysis ◽  
X Ray ◽  
Beam Scattering ◽  
Crystalline Defect

AbstractThis article discusses uses of high energy ion beam scattering for materials analysis, including channeling, particle induced x-ray emission (PIXE), and nuclear reaction analysis (NRA). These additional capabilities used in conjunction with RBS equipment provide capabilities for crystalline defect studies and light element detection.

High-temperature diffusion of oxygen in synthetic diopside measured by nuclear reaction analysis

1999 ◽  
Vol 63 (5) ◽  
pp. 673-686 ◽  
Author(s):  
L. Pacaud ◽  
J. Ingrin ◽  
O. Jaoul
Keyword(s):  
High Temperature ◽  
Nuclear Reaction ◽  
Diffusion Coefficients ◽  
Tracer Diffusion ◽  
Nuclear Reaction Analysis ◽  
Gas Mixture ◽  
Diffusion Study ◽  
Self Diffusion ◽  
Temperature Diffusion ◽  
Diffusion Profiles

AbstractWe have performed O self-diffusion experiments in synthetic diopside single crystals along the b-axis at temperatures ranging from 1473–1643 K, under controlled O partial pressure (10−11–10−2 atm). The 18O tracer diffusion was imposed by solid/gas exchange between 16O in diopside and 18O2-enriched argon-hydrogen-H2O gas mixture. Diffusion profiles of 18O were measured by Nuclear Reaction Analysis 18O (p,α) 15N. The diffusion coefficients are described by , with log D0(m2/s)=−9.2 ± 1.0 and E 310 ± 30 kJ/mol.Our results are in agreement with Ryerson and McKeegan's (1994) data and Farver's (1989) data along a direction perpendicular to the c direction. Experiments performed in a wide pO2 range show that D is independent of pO2.We observe no change in the diffusion regime up to 1643 K (i.e. 22 K prior to melting temperature). This result differs from the diffusion study of Ca in diopside by Dimanov and Ingrin (1995), where a strong enhancement of Ca mobility, attributed to an excess disorder in the Ca-sublattice, was observed above 1523 K. We conclude that O diffusion in diopside is not affected by this premelting phenomenon.

Lattice Location of Ta in Ni3Ai by Ion Channeling and Nuclear Reaction Analysis

1986 ◽  
Vol 81 ◽  
Author(s):  
H. Lin ◽  
L. E. Sehberling ◽  
P. F. Lyman ◽  
D. P. Pope
Keyword(s):  
Nuclear Reaction ◽  
Ternary Phase Diagram ◽  
Liquid Scintillator ◽  
Ion Beam ◽  
Lattice Location ◽  
Nuclear Reaction Analysis ◽  
Surface Barrier ◽  
Crystallographic Axis ◽  
Ion Channeling ◽  
Barrier Detector

AbstractWe have investigated the lattice location of Ta in Ni3Al using Rutherford backscattering with channeling, and nuclear reaction analysis. An 8 MeV 4He ion beam was directed along the < 100> crystallographic axis of the Ni75Al24Ta single crystal. A silicon surface barrier detector was used to analyze 4He ions backscattered from Ni and Ta atoms. Neutrons generated from Al by the 27Al(4He,n)30P reaction were detected by a large volume liquid scintillator placed outside of the scattering chamber. Essentially all of the Ta atoms were found to be substitutional, as determined by the Ta channeling minimum yield. A comparison of the width of the channeling angular scan for Al, Ni and Ta indicated that the Ta atoms are predominantly distributed on the Ni sites. This result is in conflict with expectations based on the ternary phase diagram.

scholarly journals NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING

2006 ◽  
Vol 16 (03n04) ◽  
pp. 231-237
Author(s):  
TAKUYA NEBIKI ◽  
TADASHI NARUSAWA ◽  
AKIKO KUMAGAI ◽  
HIDEYUKI DOI ◽  
TADASHI SAITO ◽  
...  
Keyword(s):  
Nuclear Reaction ◽  
Gaas Substrate ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Local Strain ◽  
Lattice Location ◽  
Nuclear Reaction Analysis ◽  
Substitutional Site

We have investigated the nitrogen lattice location in MOVPE grown Ga 1- x In x N y As 1- y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1- x In x N y As 1- y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N (α, p )17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 Å from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms.

scholarly journals Deuterated carbohydrate probes as ‘label-free’ substrates for probing nutrient uptake in mycobacteria by nuclear reaction analysis

2015 ◽  
Vol 51 (23) ◽  
pp. 4838-4841 ◽  
Author(s):  
R. Lowery ◽  
M. I. Gibson ◽  
R. L. Thompson ◽  
E. Fullam
Keyword(s):  
Nuclear Reaction ◽  
Nutrient Uptake ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Label Free

Deuterated sugars that are transported into mycobacteria can be detected using ion beam (nuclear reaction) analysis.

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