Materials Analysis with High Energy Ion Beams Part II: Channeling and Other Techniques

MRS Bulletin ◽  
1987 ◽  
Vol 12 (6) ◽  
pp. 30-34 ◽  
Author(s):  
H-J. Gossmann ◽  
L.C. Feldman
Keyword(s):  
Nuclear Reaction ◽  
Ion Beam ◽  
Light Element ◽  
High Energy ◽  
Ion Beams ◽  
Nuclear Reaction Analysis ◽  
Materials Analysis ◽  
X Ray ◽  
Beam Scattering ◽  
Crystalline Defect

AbstractThis article discusses uses of high energy ion beam scattering for materials analysis, including channeling, particle induced x-ray emission (PIXE), and nuclear reaction analysis (NRA). These additional capabilities used in conjunction with RBS equipment provide capabilities for crystalline defect studies and light element detection.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

scholarly journals In-Situ Ion Beam Measurements of Deuterium Loading in Thin Foil Electrochemical Cells

1989 ◽  
Vol 157 ◽  
Author(s):  
J.A. Knapp ◽  
T.R. Guilinger ◽  
M.J. Kelly ◽  
D. Walsh ◽  
B.L. Doyle
Keyword(s):  
Nuclear Reaction ◽  
Ion Beam ◽  
Cold Fusion ◽  
Thin Foil ◽  
Nuclear Reaction Analysis ◽  
Deuterium Content ◽  
Electrochemical Cells ◽  
External Beam

ABSTRACTA key element of recent assertions of "cold fusion" has been the claim that electrochemical loading of deuterium into Pd electrodes can produce D:Pd levels exceeding 1:1. Using external beam nuclear reaction analysis of Pd foil electrodes in operating electrochemical cells, we have directly monitored deuterium content in-situ. No conditions were found which resulted in loadings higher than ∼0.9.

scholarly journals Plasma diagnostics using Kα satellite emission spectroscopy in light ion beam fusion experiments

1995 ◽  
Vol 13 (2) ◽  
pp. 231-241 ◽  
Author(s):  
J.J. MacFarlane ◽  
P. Wang ◽  
J.E. Bailey ◽  
T.A. Mehlhorn ◽  
R.J. Dukart
Keyword(s):  
Emission Spectroscopy ◽  
Impact Ionization ◽  
Ion Beam ◽  
Emission Spectra ◽  
Particle Beam ◽  
High Energy ◽  
Atomic Level ◽  
High Energy Density ◽  
Equilibrium Equations ◽  
X Ray

Kα satellite spectroscopy can be a valuable technique for diagnosing conditions in high energy density plasmas. Kα emission lines are produced in intense light ion beam plasma interaction experiments as 2p electrons fill partially open Is shells created by the ion beam. In this paper, we present results from collisional-radiative equilibrium (CRE) calculations which show how Kα emission spectroscopy can be used to determine target plasma conditions in intense lithium beam experiments on Particle Beam Fusion Accelerator-II (PBFAII) at Sandia National Laboratories. In these experiments, 8–10 MeV lithium beams with intensities of 1–2 TW/cm2 irradiate planar multilayer targets containing a thin Al tracer. Kα emission spectra are measured using an X-ray crystal spectrometer with a resolution of λ/∆λ = 1200. The spectra are analyzed using a CRE model in which multilevel (NL ∼ 103) statistical equilibrium equations are solved self-consistently with the radiation field and beam properties to determine atomic level populations. Atomic level-dependent fluorescence yields and ion-impact ionization cross sections are used in computing the emission spectra. We present results showing the sensitivity of the Kα emission spectrum to temperature and density of the Al tracer. We also discuss the dependence of measured spectra on the X-ray crystal spectral resolution, and how additional diagnostic information could be obtained using multiple tracers of similar atomic number.

scholarly journals Design, development, and testing of non-intercepting profile diagnostics for intense heavy ion beams using a capacitive pickup and beam induced gas fluorescence monitors

2006 ◽  
Vol 24 (4) ◽  
pp. 541-551 ◽  
Author(s):  
F. BECKER ◽  
A. HUG ◽  
P. FORCK ◽  
M. KULISH ◽  
P. NI ◽  
...  
Keyword(s):  
Focal Plane ◽  
Energy Deposition ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beams ◽  
High Energy Density ◽  
Design Development ◽  
Heavy Ion Beam ◽  
Beam Parameters

An intense and focused heavy ion beam is a suitable tool to generate high energy density in matter. To compare results with simulations it is essential to know beam parameters as intensity, longitudinal, and transversal profile at the focal plane. Since the beam's energy deposition will melt and evaporate even tungsten, non-intercepting diagnostics are required. Therefore a capacitive pickup with high resolution in both time and space was designed, built and tested at the high temperature experimental area at GSI. Additionally a beam induced fluorescence monitor was investigated for the synchrotron's (SIS-18) energy-regime (60–750 AMeV) and successfully tested in a beam-transfer-line.

EFFECT OF ION-ENERGY ON THE PROPERTIES OF AMORPHOUS GaN FILMS PRODUCED BY ION-ASSISTED DEPOSITION

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1355-1360 ◽  
Author(s):  
UDAY LANKE ◽  
ANNETTE KOO ◽  
SIMON GRANVILLE ◽  
JOE TRODAHL ◽  
ANDREAS MARKWITZ ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Thermal Evaporation ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Nuclear Reaction Analysis ◽  
Ion Energy ◽  
X Ray ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 × 10-4 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies 40 eV and 90 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques. The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN . The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented.

THE NEW LOW ENERGY ION BEAM ANALYSIS FACILITY AT MAPUTO UNIVERSITY

1995 ◽  
Vol 05 (04) ◽  
pp. 249-253
Author(s):  
R.J. UTUI ◽  
N.P.O. HOMMAN ◽  
K.G. MALMQVIST
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Proton Accelerator ◽  
Nuclear Reaction Analysis ◽  
Beam Diagnostics ◽  
Ion Beam Analysis ◽  
X Ray ◽  
Beam Analysis ◽  
Set Up ◽  
Eduardo Mondlane University

A new Ion Beam Analysis (IBA) facility which was recently installed in the Department of Physics of the Eduardo Mondlane University of Maputo, Mozambique, is described. The set up is based on a low energy (500 keV) Van de Graaff proton accelerator and is intended to be used in particle induced X-ray emission (PIXE), Rutherford Backscattering (RBS) and nuclear reaction analysis (NRA). Preliminary experiments on beam diagnostics were performed successfully and the followed procedure is described.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Application of Ion Beam Techniques to the Study of Glass Durability: Enhanced Dissolution in Saline and Radiation Effects

1981 ◽  
Vol 6 ◽  
Author(s):  
C. Burman ◽  
Wang Ke-Ming ◽  
W.A. Lanford
Keyword(s):  
Aqueous Solutions ◽  
Radiation Effects ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
Nuclear Reaction Analysis ◽  
Distilled Water ◽  
Hydrogen Water ◽  
Enhanced Dissolution ◽  
Implantation Techniques

ABSTRACTNuclear reaction analysis, Rutherford backscattering and ion implantation techniques are applied to the study of the reaction between glass and aqueous solutions. The use of these techniques is described as are some of the results obtained. Solutions of NaCl are seen to etch some glasses several orders of magnitude faster than distilled water. Radiation damage created by high energy heavy ion bombardment is seen to have great effects on the penetration of hydrogen (water) into glass.

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