scholarly journals In-Situ Ion Beam Measurements of Deuterium Loading in Thin Foil Electrochemical Cells

1989 ◽  
Vol 157 ◽  
Author(s):  
J.A. Knapp ◽  
T.R. Guilinger ◽  
M.J. Kelly ◽  
D. Walsh ◽  
B.L. Doyle
Keyword(s):  
Nuclear Reaction ◽  
Ion Beam ◽  
Cold Fusion ◽  
Thin Foil ◽  
Nuclear Reaction Analysis ◽  
Deuterium Content ◽  
Electrochemical Cells ◽  
External Beam

ABSTRACTA key element of recent assertions of "cold fusion" has been the claim that electrochemical loading of deuterium into Pd electrodes can produce D:Pd levels exceeding 1:1. Using external beam nuclear reaction analysis of Pd foil electrodes in operating electrochemical cells, we have directly monitored deuterium content in-situ. No conditions were found which resulted in loadings higher than ∼0.9.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Materials Analysis with High Energy Ion Beams Part II: Channeling and Other Techniques

MRS Bulletin ◽  
1987 ◽  
Vol 12 (6) ◽  
pp. 30-34 ◽  
Author(s):  
H-J. Gossmann ◽  
L.C. Feldman
Keyword(s):  
Nuclear Reaction ◽  
Ion Beam ◽  
Light Element ◽  
High Energy ◽  
Ion Beams ◽  
Nuclear Reaction Analysis ◽  
Materials Analysis ◽  
X Ray ◽  
Beam Scattering ◽  
Crystalline Defect

AbstractThis article discusses uses of high energy ion beam scattering for materials analysis, including channeling, particle induced x-ray emission (PIXE), and nuclear reaction analysis (NRA). These additional capabilities used in conjunction with RBS equipment provide capabilities for crystalline defect studies and light element detection.

USE OF ION BEAM ANALYSIS TO STUDY IN SITU THE OXYGEN DIFFUSION AND INTERFACIAL TRANSFER COEFFICIENTS IN Y1Ba2Cu3O7-x THIN FILMS

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1361-1369 ◽  
Author(s):  
J. GARCÍA LÓPEZ ◽  
J SIEJKA ◽  
Y. LEMAITRE ◽  
J. C. MAGE ◽  
B. MARCILHAC
Keyword(s):  
Thin Films ◽  
Nuclear Reaction ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Ion Beam ◽  
Experimental Chamber ◽  
Transfer Coefficients ◽  
Oxygen Loss ◽  
Carbon Contamination

An experimental chamber was connected to the 2.5 MV Van de Graaff accelerator allowing in situ sample annealing at T ≤ 700° C and under pO 2 ranging from 10-8 to 1 bar. For the first time to our knowledge the 16 O (3 He ,α)15 O nuclear reaction has been employed to monitor in situ the oxygen loss and uptake in Y 1 Ba 2 Cu 3 O 7-x (YBCO) thin films as a function of oxygen pressure and temperature ( T ≤ 500° C ). The role played by the presence of carbon contamination on YBCO surface was elucidated. Using the 12 C(d,p) 13 C nuclear reaction the carbon loss was observed for T ≥ 250° C and it was associated with the oxygen loss enhancement in YBCO. It is found that in absence of carbon contamination, oxygen in-diffusion rate in YBCO is much faster than the out-diffusion rate, the later being surface reaction limited. The oxygen diffusion coefficients and the surface exchange coefficients of YBCO films have been evaluated. These results will be discussed in relation with the mechanism of high temperature YBCO thin film growth by cathodic sputtering and with the mechanism of the oxygen loss and/or uptake during the sample cooling.

Helium Migration Mechanisms in Polycrystalline Uranium Dioxide

2006 ◽  
Vol 985 ◽  
Author(s):  
Guillaume Martin ◽  
Pierre Desgardin ◽  
Philippe Garcia ◽  
Thierry Sauvage ◽  
Gaëlle Carlot ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Nuclear Reaction ◽  
Uranium Dioxide ◽  
Nuclear Reaction Analysis ◽  
Annealing Stage ◽  
Depth Profiles ◽  
Release Mechanisms ◽  
Helium Diffusion

AbstractThis study aims at identifying the release mechanisms of helium in uranium dioxide. Two sets of polycrystalline UO2 sintered samples presenting different microstructures were implanted with 3He ions at concentrations in the region of 0.1 at.%. Changes in helium concentrations were monitored using two Nuclear Reaction Analysis (NRA) techniques based on the 3He(d,α)1H reaction. 3He release is measured in-situ during sample annealing at temperatures ranging between 700°C and 1000°C. Accurate helium depth profiles are generated after each annealing stage. Results that provide data for further understanding helium release mechanisms are discussed. It is found that helium diffusion appears to be enhanced above 900°C in the vicinity of grain boundaries possibly as a result of the presence of defects.

Lattice Location of Ta in Ni3Ai by Ion Channeling and Nuclear Reaction Analysis

1986 ◽  
Vol 81 ◽  
Author(s):  
H. Lin ◽  
L. E. Sehberling ◽  
P. F. Lyman ◽  
D. P. Pope
Keyword(s):  
Nuclear Reaction ◽  
Ternary Phase Diagram ◽  
Liquid Scintillator ◽  
Ion Beam ◽  
Lattice Location ◽  
Nuclear Reaction Analysis ◽  
Surface Barrier ◽  
Crystallographic Axis ◽  
Ion Channeling ◽  
Barrier Detector

AbstractWe have investigated the lattice location of Ta in Ni3Al using Rutherford backscattering with channeling, and nuclear reaction analysis. An 8 MeV 4He ion beam was directed along the < 100> crystallographic axis of the Ni75Al24Ta single crystal. A silicon surface barrier detector was used to analyze 4He ions backscattered from Ni and Ta atoms. Neutrons generated from Al by the 27Al(4He,n)30P reaction were detected by a large volume liquid scintillator placed outside of the scattering chamber. Essentially all of the Ta atoms were found to be substitutional, as determined by the Ta channeling minimum yield. A comparison of the width of the channeling angular scan for Al, Ni and Ta indicated that the Ta atoms are predominantly distributed on the Ni sites. This result is in conflict with expectations based on the ternary phase diagram.

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