DIANE neutron radiography device performance: comparison with reactor beam

Author(s):  
S. Cluzeau ◽  
P. Le Tourneur ◽  
W.E. Dance
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.


1986 ◽  
Vol 133 (1) ◽  
pp. 65
Author(s):  
W.L. Baillie ◽  
P.M. Openshaw ◽  
A.D. Hart ◽  
S.S. Makh

Author(s):  
Molla Asmare ◽  
Mustafa Ilbas

Nowadays, the most decisive challenges we are fronting are perfectly clean energy making for equitable and sustainable modern energy access, and battling the emerging alteration of the climate. This is because, carbon-rich fuels are the fundamental supply of utilized energy for strengthening human society, and it will be sustained in the near future. In connection with this, electrochemical technologies are an emerging and domineering tool for efficiently transforming the existing scarce fossil fuels and renewable energy sources into electric power with a trivial environmental impact. Compared with conventional power generation technologies, SOFC that operate at high temperature is emerging as a frontrunner to convert the fuels chemical energy into electric power and permits the deployment of varieties of fuels with negligible ecological destructions. According to this critical review, direct ammonia is obtained as a primary possible choice and price-effective green fuel for T-SOFCs. This is because T-SOFCs have higher volumetric power density, mechanically stable, and high thermal shocking resistance. Also, there is no sealing issue problem which is the chronic issues of the planar one. As a result, the toxicity of ammonia to use as a fuel is minimized if there may be a leakage during operation. It is portable and manageable that can be work everywhere when there is energy demand. Besides, manufacturing, onboard hydrogen deposition, and transportation infrastructure connected snags of hydrogen will be solved using ammonia. Ammonia is a low-priced carbon-neutral source of energy and has more stored volumetric energy compared with hydrogen. Yet, to utilize direct NH3 as a means of hydrogen carrier and an alternative green fuel in T-SOFCs practically determining the optimum operating temperatures, reactant flow rates, electrode porosities, pressure, the position of the anode, thickness and diameters of the tube are still requiring further improvement. Therefore, mathematical modeling ought to be developed to determine these parameters before planning for experimental work. Also, a performance comparison of AS, ES, and CS- T-SOFC powered with direct NH3 will be investigated and best-performed support will be carefully chosen for practical implementation and an experimental study will be conducted for verification based on optimum parameter values obtained from numerical modeling.


1999 ◽  
Author(s):  
C-C. Chen ◽  
C. Lai ◽  
T. Shih

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