Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

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Characterization of PECVD SixOyNz:H Films and its Correlation to Device Performance and Reliability

MRS Proceedings ◽

10.1557/proc-338-75 ◽

1994 ◽

Vol 338 ◽

Cited By ~ 1

Author(s):

Mansour Moinpour ◽

Ken Mack ◽

Johnny Cham ◽

Farhad Moghadam ◽

Byron Williams

Keyword(s):

Integrated Circuits ◽

Rutherford Backscattering Spectrometry ◽

Chemical Vapor ◽

Ammonia Nitrogen ◽

Silicon Oxynitride ◽

Device Performance ◽

Vis Spectroscopy ◽

Oxynitride Film ◽

Wafer Processing

ABSTRACTFor integrated circuits, the integrity and film quality of the final passivation layer plays an important role in the device performance and reliability. Hydrogenated amorphous silicon oxynitride (α-SixNyOz:H) films deposited by plasma enhanced chemical vapor deposition (PECVD) have been extensively used for final device passivation applications. In this paper, a detailed characterization of PECVD oxynitride process for 200 mm Si wafer processing is presented. Silicon oxynitride of various compositions were deposited by changing the amounts of silane, ammonia, nitrogen and nitrous oxide in the reactant gas stream. Ultraviolet/Visible (UV/VIS) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), and refractive index measurements were used to examine the variation in physical, optical and electrical properties. A correlation is observed between the oxynitride film composition, mainly N-H/Si-H ratio, and UV transmissivity (UV %T) which is of particular interest for memory applications. Effects of oxynitride film quality on e-test parameters and device performance are discussed.

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Characterization of Tungsten Nucleation Layers Deposited Using Various Sih4 and Wf6 Flows

MRS Proceedings ◽

10.1557/proc-337-569 ◽

1994 ◽

Vol 337 ◽

Author(s):

V.V.S. Rana ◽

M. Eizenberg ◽

S. Ghanayem ◽

J. Roberts ◽

A.K. Sinha

Keyword(s):

Chemical Vapor Deposition ◽

Bulk Density ◽

Deposition Rate ◽

Incubation Time ◽

Vapor Deposition ◽

Chemical Vapor ◽

Pure Tungsten ◽

Tungsten Hexafluoride ◽

Step Coverage

ABSTRACTChemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH4) reduction of tungsten hexafluoride (WF6). For SiH4/WF6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi2 is deposited, and at ratios of > 6 WSi2 along with silicon is deposited. A maximum in deposition rate is obtained for WSi2 at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.

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Preparation and characterization of thin films of carbon nitride

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136891 ◽

1995 ◽

Vol 53 ◽

pp. 104-105

Author(s):

L. Wan ◽

R. F. Egerton

Keyword(s):

Carbon Nitride ◽

Arc Discharge ◽

Ion Beam ◽

Chemical Vapor ◽

Reactive Sputtering ◽

Vacuum Arc ◽

Specimen Preparation ◽

Bonding Structure ◽

Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

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Characterization of interfaces in CVD-coated nicalon fiber-reinforced SiC

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154755 ◽

1989 ◽

Vol 47 ◽

pp. 556-557

Author(s):

K.L. More ◽

R.A. Lowden

Keyword(s):

Mechanical Properties ◽

Fracture Toughness ◽

Chemical Vapor ◽

Chemical Vapor Infiltration ◽

Frictional Stress ◽

Fiber Reinforced ◽

Pull Out ◽

Carbon Coated ◽

Fiber Matrix

The mechanical properties of fiber-reinforced composites are directly related to the nature of the fiber-matrix bond. Fracture toughness is improved when debonding, crack deflection, and fiber pull-out occur which in turn depend on a weak interfacial bond. The interfacial characteristics of fiber-reinforced ceramics can be altered by applying thin coatings to the fibers prior to composite fabrication. In a previous study, Lowden and co-workers coated Nicalon fibers (Nippon Carbon Company) with silicon and carbon prior to chemical vapor infiltration with SiC and determined the influence of interfacial frictional stress on fracture phenomena. They found that the silicon-coated Nicalon fiber-reinforced SiC had low flexure strengths and brittle fracture whereas the composites containing carbon coated fibers exhibited improved strength and fracture toughness. In this study, coatings of boron or BN were applied to Nicalon fibers via chemical vapor deposition (CVD) and the fibers were subsequently incorporated in a SiC matrix. The fiber-matrix interfaces were characterized using transmission and scanning electron microscopy (TEM and SEM). Mechanical properties were determined and compared to those obtained for uncoated Nicalon fiber-reinforced SiC.

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TEM characterization of Au/Polysilicon interactions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176381 ◽

1990 ◽

Vol 48 (4) ◽

pp. 650-651

Author(s):

N. David Theodore ◽

Leslie H. Allen ◽

C. Barry Carter ◽

James W. Mayer

Keyword(s):

Solid Phase ◽

Single Crystal Silicon ◽

Chemical Vapor ◽

Electrical Contacts ◽

Silicon Substrates ◽

Crystal Silicon ◽

Transmission Electron ◽

Polysilicon Films ◽

The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

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