Studies of the low temperature oxidation of alloys by X-ray photoelectron spectroscopy: CuZn

1982 ◽  
Vol 10 (4) ◽  
pp. 523-545 ◽  
Author(s):  
Tery L. Barr ◽  
John J. Hackenberg
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
X Ray

Low Temperature Oxidation Processing with High Purity Ozone

1996 ◽  
Vol 429 ◽  
Author(s):  
A. Kurokawa ◽  
S. Ichimura ◽  
H. J. Kang ◽  
D. W. Moon
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
High Purity ◽  
Photoelectron Spectroscopy ◽  
Oxide Formation ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
X Ray

AbstractTo lower the temperature of oxide-passivation processing the high- purity ozone (more than 98 mole %) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

scholarly journals ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 134 ◽  
Author(s):  
Shin Yong Joo ◽  
Chadrasekhar Loka ◽  
Young Woong Jo ◽  
Maddipatla Reddyprakash ◽  
Sung Whan Moon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sapphire Substrate ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Touch Screen ◽  
Sio2 Film ◽  
Silicon Films ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Si Films

The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

Low Temperature Oxidation of Cu-Base Leadframe and Cu/Emc Interface Adhesion

1996 ◽  
Vol 445 ◽  
Author(s):  
Soon-Jin Cho ◽  
Kyung-Wook Paik
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Early Stage ◽  
Kinetic Studies ◽  
Oxide Thickness ◽  
Low Temperature Oxidation ◽  
Copper Oxidation ◽  
Temperature Oxidation ◽  
Pull Strength ◽  
20 Nm

AbstractLow temperature oxidation of a Cu-base leadframe has been investigated to understand the effect of Cu oxidation on the adhesion between Cu-base leadframes (Cu L/F) and epoxy molding compounds (EMC). From the kinetic studies on the oxidation, oxide growth was found to follow the parabolic rate law in the temperature range of 150 °C to 300 °C and the activation energy for the oxidation was 17.0 kcal/mol. X-ray photoelectron spectroscopy (XPS) studies confirmed that the oxide film consisted of Cu2O, CuO, and NiO. It was shown that the early stage of oxidation improved the adhesion strength. Furthermore the optimum copper oxide thickness required for the maximum pull strength ranged between 20 nm and 30 nm. The high pull strength was presumably due to the increase of surface wettability and mechanical interlocking effects resulting from copper oxidation.

scholarly journals Low Temperature Oxidation of Carbon Monoxide over Mesoporous Au-Fe2O3Catalysts

2017 ◽  
Vol 2017 ◽  
pp. 1-14 ◽  
Author(s):  
Abdulmohsen Ali Alshehri ◽  
Katabathini Narasimharao
Keyword(s):  
Thermal Treatment ◽  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
High Specific Surface Area ◽  
Precipitation Method ◽  
Transmission Electron Microscopy Analysis ◽  
Temperature Oxidation ◽  
X Ray ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Low temperature active and stable mesoporous Au (0.1, 0.2, 0.5, and 1.0 wt.%) supportedα-Fe2O3catalysts were prepared via deposition-precipitation method. The H2-pretreated catalyst with 0.5 wt.% Au loading offered CO conversion of 100% at 323 K and showed continual activity for at least 120 h. X-ray diffraction and transmission electron microscopy analysis indicate that Au species were highly dispersed as nanoparticles (20–40 nm) on the surface ofα-Fe2O3support even after thermal treatment at 773 K. The N2-physisorption measurements show that the synthesizedα-Fe2O3support and Au-Fe2O3nanocomposites possessed mesopores with high specific surface area of about 158 m2 g−1. X-ray photoelectron spectroscopy and H2-TPR results reveal that the Au species exist in metallic and partially oxidized state due to strong interaction with the support. Effective Au-Fe2O3interaction resulted in a high activity for Au nanoparticles, locally generated by the thermal treatment at 773 K in air.

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