Low Temperature Oxidation of Cu-Base Leadframe and Cu/Emc Interface Adhesion

1996 ◽  
Vol 445 ◽  
Author(s):  
Soon-Jin Cho ◽  
Kyung-Wook Paik
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Early Stage ◽  
Kinetic Studies ◽  
Oxide Thickness ◽  
Low Temperature Oxidation ◽  
Copper Oxidation ◽  
Temperature Oxidation ◽  
Pull Strength ◽  
20 Nm

AbstractLow temperature oxidation of a Cu-base leadframe has been investigated to understand the effect of Cu oxidation on the adhesion between Cu-base leadframes (Cu L/F) and epoxy molding compounds (EMC). From the kinetic studies on the oxidation, oxide growth was found to follow the parabolic rate law in the temperature range of 150 °C to 300 °C and the activation energy for the oxidation was 17.0 kcal/mol. X-ray photoelectron spectroscopy (XPS) studies confirmed that the oxide film consisted of Cu2O, CuO, and NiO. It was shown that the early stage of oxidation improved the adhesion strength. Furthermore the optimum copper oxide thickness required for the maximum pull strength ranged between 20 nm and 30 nm. The high pull strength was presumably due to the increase of surface wettability and mechanical interlocking effects resulting from copper oxidation.

scholarly journals ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 134 ◽  
Author(s):  
Shin Yong Joo ◽  
Chadrasekhar Loka ◽  
Young Woong Jo ◽  
Maddipatla Reddyprakash ◽  
Sung Whan Moon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sapphire Substrate ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Touch Screen ◽  
Sio2 Film ◽  
Silicon Films ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Si Films

The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

Low-Temperature Oxidation of Silicon(100) Substrates Using Atomic Oxygen

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Ueno ◽  
S. Chikamura ◽  
F. Sakuraba ◽  
Y Iwasaki
Keyword(s):  
Low Temperature ◽  
Atomic Oxygen ◽  
Microwave Plasma ◽  
Parabolic Rate Constant ◽  
Oxide Thickness ◽  
Rare Gas ◽  
Processing Temperature ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Plasma Energy

ABSTRACTLow temperature oxidation process of Si(100) substrates using atomic oxygen has been proposed. For the generation of atomic oxygen, microwave plasma remotely attached on the oxidation chamber was used. In the microwave plasma, the large amount of rare gas and a small amount of 02 gas mixture was supplied. The existence of the large amount of rare gas controls the plasma energy to some restricted values associated with the metastable states of the rare gas. Consequently, using Kr as mixed rare gas, atomic oxygen were efficiently generated instead of excited 02 molecules with any vibrational or ionized states. The oxidation kinetics of crystalline Si using this process was shown to be diffusion limiting, even if the oxide thickness was less than several nm. The activation energy of B, which is referred to as the parabolic rate constant, was found to be as low as 0.14eV In addition, lower interface trap density of 2.6 × 1011/cm2/eV at the mid gap could be achieved for the as-grown SiO2/Si(100) interface at the processing temperature of 500C.

On the low-temperature oxidation of isobutane and propylene

1955 ◽  
Vol 8 (3) ◽  
pp. 370 ◽  
Author(s):  
JJ Batten ◽  
MJ Ridge
Keyword(s):  
Low Temperature ◽  
Induction Period ◽  
Gas Phase ◽  
Early Stage ◽  
Reaction Vessel ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Alkyl Hydroperoxides ◽  
Active Intermediate

The low-temperature oxidation of isobutane and propylene has been studied by interrupting the reaction by withdrawing the partly reacted mixture from the reaction vessel. After treatment designed to destroy peroxides the mixture was returned to the reaction vessel. The results show that the termination of the induction period is due to the accumulation of an active intermediate or intermediates in the gas phase. In both systems these intermediates are probably not alkyl hydroperoxides. �� Changes in the surface of the reaction vessel brought about by processes occurring in the early stage. of the reaction do not contribute to the termination of the induction period.

Low Temperature Oxidation Processing with High Purity Ozone

1996 ◽  
Vol 429 ◽  
Author(s):  
A. Kurokawa ◽  
S. Ichimura ◽  
H. J. Kang ◽  
D. W. Moon
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
High Purity ◽  
Photoelectron Spectroscopy ◽  
Oxide Formation ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
X Ray

AbstractTo lower the temperature of oxide-passivation processing the high- purity ozone (more than 98 mole %) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

Sign in / Sign up

Export Citation Format

Share Document