A study of the distribution of hydrogen and strain in proton-bombarded liquid-encapsulated Czochralski-grown GaAs by double-crystal x-ray diffraction and secondary ion mass spectrometry

1989 ◽  
Vol 2 (1-3) ◽  
pp. 91-97 ◽  
Author(s):  
G.T. Brown ◽  
S.J. Barnett ◽  
S.J. Courtney ◽  
S.S. Gill
Molecules ◽  
2019 ◽  
Vol 24 (5) ◽  
pp. 880 ◽  
Author(s):  
Anna Marzec ◽  
Bolesław Szadkowski ◽  
Jacek Rogowski ◽  
Waldemar Maniukiewicz ◽  
Marian Zaborski

In this study, novel organic–inorganic composites were prepared by the complexation of dicarboxylic azo dye (AD) with aluminum–magnesium hydroxycarbonate (AlMg–LH). This procedure provides an effective method for the stabilization of dicarboxylic organic chromophores on an AlMg−LH host. The structures of the hybrid composites were examined by X-ray diffraction (XRD), secondary ion mass spectrometry (TOF-SIMS), 27-Al solid-state nuclear magnetic resonance (NMR) spectroscopy, thermogravimetric analysis (TGA) and scanning transmission electron microscopy (STEM). The TOF-SIMS method was applied to investigate the metal–dye interactions and to monitor the thermal stability of the organic–inorganic complexes. Secondary ion mass spectrometry confirmed the presence of a characteristic peak for C18H10O5N2Mg22+, indicating that both carboxylic groups interacted with AlMg−LH by forming complexes with two Mg2+ ions. Modification with hybrid pigments affected the crystal structure of the AlMg−LH mineral, as shown by the appearance of new peaks on the X-ray diffraction patterns. Adsorption of the dicarboxylic chromophore not only led to significantly enhanced solvent resistance but also improved the thermal and photostability of the hybrid pigments. We propose a possible arrangement of the azo dye in the inorganic matrix, as well as the presumed mechanism of stabilization.


2001 ◽  
Vol 669 ◽  
Author(s):  
M. S. Carroll ◽  
J. C. Sturm ◽  
E. Napolitani ◽  
D. De Salvador ◽  
M. Berti ◽  
...  

ABSTRACTThe effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.


Author(s):  
Lluís Yedra ◽  
C. N. Shyam Kumar ◽  
Alisa Pshenova ◽  
Esther Lentzen ◽  
Patrick Philipp ◽  
...  

The study demonstrates a new method to quantify Secondary Ion Mass Spectrometry (SIMS) images by using a synergetic combination of Energy Dispersive X-ray spectroscopy (EDX) and SIMS.


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