Diamond disc pad conditioning in chemical mechanical polishing

2022 ◽  
pp. 383-412
Author(s):  
Z.C. Li ◽  
E.A. Baisie ◽  
X.H. Zhang ◽  
Q. Zhang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Pad Conditioning ◽  
Diamond Disc

Diamond Disc Pad Conditioning in Chemical Mechanical Polishing: A Literature Review of Process Modeling

2009 ◽  
Author(s):  
Emmanuel A. Baisie ◽  
Z. C. Li ◽  
X. H. Zhang
Keyword(s):  
Process Modeling ◽  
Chemical Mechanical Polishing ◽  
Research Work ◽  
Mechanical Polishing ◽  
Process Models ◽  
Future Research ◽  
Process Conditions ◽  
Paper Briefly ◽  
Pad Conditioning ◽  
Diamond Disc

Chemical Mechanical Polishing (CMP) is a major manufacturing step extensively used to planarize semiconductor wafers. In CMP, the polishing pad surface is glazed by residues. A diamond disc conditioner is used to dress the pad to regenerate new pad profile and asperity in order to maintain favorable process conditions. This paper presents a review on process modeling of diamond disc pad conditioning in CMP. Following the introduction, the paper briefly introduces a technical background of the conditioning process and process control. It then summarizes research work on the various analytical process models proposed and ends with conclusions and topics for future research.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning

2006 ◽  
Vol 504 (1-2) ◽  
pp. 166-169 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Pil-Ju Ko ◽  
Gwon-Woo Choi ◽  
Yong-Jin Seo ◽  
Woo-Sun Lee
Keyword(s):  
High Temperature ◽  
Chemical Mechanical Polishing ◽  
Sio2 Film ◽  
Mechanical Polishing ◽  
Pad Conditioning

The Development of an Ultrasonic Head for CMP Pad Conditioning

2012 ◽  
Vol 500 ◽  
pp. 275-280
Author(s):  
Pei Lum Tso ◽  
Shi Guo Liu ◽  
J. C. Wang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Machining Processes ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Key Word ◽  
Ultrasonic Assisted ◽  
Ultrasonic Assisted Machining ◽  
Pad Conditioning ◽  
The Cost

The technology of ultrasonic assisted machining has been successfully used in many machining processes recently. Conditioning in the CMP not only can extending the life of the polishing pad but also improve process stability. In this paper we develop a brand new conditioning process with ultrasonic assisted conditioning UAC head for chemical mechanical polishing CMP process. The slurry came from inside the polishing spindle and had an independent cyclic system. As a result, this UAC device can remove polishing debris 4-6 times faster than conventional conditioning process. This conditioning process may even use water instead of slurry to reduce the cost of consumables of CMP. Key word: Chemical mechanical polishing CMP, Ultrasonic assisted conditioning UAC, Polishing Pad

Pad Conditioning and Pad Surface Characterization in Oxide Chemical Mechanical Polishing

2002 ◽  
Vol 732 ◽  
Author(s):  
A. Scott Lawing
Keyword(s):  
Surface State ◽  
Chemical Mechanical Polishing ◽  
Surface Characterization ◽  
Careful Analysis ◽  
Mechanical Polishing ◽  
Design Parameters ◽  
Strong Correlations ◽  
Surface Data ◽  
Pad Conditioning ◽  
Vertical Scanning Interferometry

AbstractAn understanding of the pad surface state and its effect on the polishing process is critical to a more fundamental understanding of Chemical Mechanical Polishing (CMP). Vertical Scanning Interferometry has been shown to be a useful tool to monitor the pad surface state. In this paper, various techniques for analyzing pad surface data obtained using interferometry are described. The pad surface state can be modified through the manipulation of process and pad conditioner design parameters. Many of the parameters extracted from interferometry data show strong correlations with corresponding polish data. A careful analysis of these complementary data can yield significant insight into the mechanisms of CMP processes.

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