Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature

2007 ◽  
pp. 263-266
Author(s):  
Nam Hoon Kim ◽  
Gwon Woo Choi ◽  
Yong Jin Seo ◽  
Woo Sun Lee
Keyword(s):  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Conditioning Temperature ◽  
Chemical Mechanical Polishing Process ◽  
Pad Conditioning ◽  
Film Characteristics

Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 263-266
Author(s):  
Nam Hoon Kim ◽  
Gwon Woo Choi ◽  
Yong Jin Seo ◽  
Woo Sun Lee
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Removal Rate ◽  
Optical Transmittance ◽  
Conditioning Process ◽  
Conditioning Temperature ◽  
Chemical Mechanical Polishing Process ◽  
Pad Conditioning

Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the general conditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.

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