Ensemble Monte Carlo calculation of electron impact ionization coefficients in bulk Ga0.5In0.5P using a k-dependent transition rate formulation

1993 ◽  
pp. 475-479
Author(s):  
Yang Wang ◽  
Kevin F. Brennan
Keyword(s):  
Monte Carlo ◽  
Electron Impact ◽  
Transition Rate ◽  
Impact Ionization ◽  
Monte Carlo Calculation ◽  
Electron Impact Ionization ◽  
Ensemble Monte Carlo ◽  
Ionization Coefficients ◽  
Rate Formulation

Monte Carlo Based Calculation of Transport Parameters for Wide Band Gap Device Simulation

2000 ◽  
Vol 622 ◽  
Author(s):  
E. Bellotti ◽  
M. Farahmand ◽  
H.-E Nilsson ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Monte Carlo Model ◽  
Wide Band ◽  
Transport Parameters ◽  
Wide Band Gap ◽  
Wurtzite Phase ◽  
Ensemble Monte Carlo ◽  
Ionization Coefficients

ABSTRACTWe present Monte Carlo based calculations of transport parameters useful in the simulation of III-nitride and SiC based devices. The calculations are performed using a full band ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and impact ionization transition rates. Calculations are made for the wurtzite and zincblende phases of GaN, the wurtzite phase of InN, and the 3C (cubic) and 4H phases of SiC. The basic transport parameters determined are saturation drift velocity, and the ionization coefficients as a function of applied electric field. Results from the various materials are finally compared.

Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN using a Wave Vector Dependent Numerical Transition Rate Formulation

1995 ◽  
Vol 395 ◽  
Author(s):  
J. Kolnik ◽  
I.H. Oguzman ◽  
K.F. Brennan ◽  
R. Wang ◽  
P.P. Ruden
Keyword(s):  
Monte Carlo ◽  
Transition Rate ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Golden Rule ◽  
Ionization Rate ◽  
Ensemble Monte Carlo ◽  
Bulk Gan ◽  
Impact Ionization Rate ◽  
The Impact

ABSTRACTIn this paper, we present ensemble Monte Carlo based calculations of electron initiated impact ionization in bulk zincblende GaN using a wavevector dependent formulation of the interband impact ionization transition rate. These are the first reported estimates, either theoretical or experimental, of the impact ionization rates in GaN. The transition rate is determined from Fermi’s golden rule for a two-body screened Coulomb interaction using a numerically determined dielectric function as well as by numerically integrating over all of the possible final states. The Monte Carlo simulator includes the full details of the first four conduction bands derived from an empirical pseudopotential calculation as well as all of the relevant phonon scattering mechanisms. It is found that the ionization rate has a relatively "soft" threshold.

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