YBCO and Na doped YBCO thin films prepared in-situ by resistive evaporation

1994 ◽  
pp. 481-484
Author(s):  
J. Azoulay ◽  
I. Lapsker ◽  
A. Verdyan
Keyword(s):  
Thin Films ◽  
Ybco Thin Films

In-Situ Laser Processing and Microstructural Characteristics of YBa2Cu3O7−δ Thin Films on Si with TiN Buffer Layer

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transition Temperature ◽  
Buffer Layer ◽  
Processing Parameters ◽  
Superconducting Transition ◽  
Epitaxial Relationship ◽  
Ybco Thin Films ◽  
Zero Resistance

ABSTRACTWe have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.

Study of in situ laser deposited YBCO thin films

1990 ◽  
Vol 164-165 ◽  
pp. 383-390 ◽  
Author(s):  
G. Brorsson ◽  
J.A. Alarco ◽  
Z.G. Ivanov ◽  
H. Olin ◽  
P-Å Nilsson ◽  
...  
Keyword(s):  
Thin Films ◽  
Ybco Thin Films

In Situ Deposition of YBCO Thin Films by Sputtering under Low Oxygen Partial Pressure

1994 ◽  
Vol 33 (Part 2, No. 5B) ◽  
pp. L718-L721 ◽  
Author(s):  
Yong Ki Park ◽  
Keunseop Park ◽  
Soon-Gul Lee ◽  
Dong Chan Shin ◽  
Jong-Chul Park
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Ybco Thin Films ◽  
In Situ Deposition

Properties of in-situ laser-pulsed deposited YBCO thin films on MgO with SrTiO3 buffer layer

1996 ◽  
Vol 260 (1-2) ◽  
pp. 111-116 ◽  
Author(s):  
V. Boffa ◽  
T. Petrisor ◽  
L. Ciontea ◽  
U. Gambardella ◽  
S. Barbanera
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Ybco Thin Films

Study on the oxygenation process during the heat treatment of TFA-MOD YBCO thin films by in situ resistance measurement

2013 ◽  
Vol 494 ◽  
pp. 148-152 ◽  
Author(s):  
Timing Qu ◽  
Yunran Xue ◽  
Feng Feng ◽  
Rongxia Huang ◽  
Wei Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Resistance Measurement ◽  
Ybco Thin Films

Large Area Pulsed Laser Deposition of YBCO Thin Films and Buffer Layers on 3-Inch Wafers

1994 ◽  
Vol 341 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
H. Börner ◽  
D. Natusch ◽  
K. Kreher
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Thickness Distribution ◽  
Buffer Layers ◽  
Large Area ◽  
Promising Technique ◽  
Laser Plume ◽  
Ybco Thin Films ◽  
Epitaxial Oxide

AbstractAn arrangement for large area PLD on 3-inch wafers is proposed. In order to get a homogeneous stoichiometry and thickness distribution and small variations of superconducting properties on the 3-inch diameter, the substrate is foreseen to be rotated and additionally laterally moved up to 45 mm during deposition whereas the laser plume remains fixed.YSZ buffer layers showed thickness homogeneity of 1% within 10 mm, of 4% within 2 inch and of 8% within 3 inch diameter, respectively. For in-situ deposited YBCO thin films on r-plane sapphire with YSZ buffer layer we inductively measured within 3 inch diameter values of the critical temperature Tc(90%) from 85.9 K to 86.7 K and values of the critical current density jc(77 K) from 1 × 106 to 2 × 106 A/cm2. However, up to now the degree of epitaxy of the YBCO thin films on r-plane sapphire with YSZ buffer layer is lower compared to YBCO on MgO(100) as determined by Raman spectroscopy. Nevertheless, large area PLD seems to be a very promising technique for homogeneous coating of 3-inch wafers by epitaxial oxide thin films.

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