Optical thin film formation by oxygen cluster ion beam assisted depositions

2004 ◽  
Vol 226 (1-3) ◽  
pp. 231-236 ◽  
Author(s):  
N Toyoda ◽  
I Yamada
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Ion Beam ◽  
Optical Thin Film ◽  
Cluster Ion ◽  
Oxygen Cluster ◽  
Thin Film Formation

Optical thin film formation by gas-cluster ion beam assisted deposition

1999 ◽  
Author(s):  
H. Katsumata ◽  
J. Matsuo ◽  
T. Nishihara ◽  
T. Tachibana ◽  
K. Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Ion Beam ◽  
Optical Thin Film ◽  
Ion Beam Assisted Deposition ◽  
Cluster Ion ◽  
Thin Film Formation ◽  
Gas Cluster Ion Beam

High Quality Oxide Film Formation by 02 Cluster Ion Assisted Deposition Technique

1997 ◽  
Vol 504 ◽  
Author(s):  
J. Matsuo ◽  
W. Qin ◽  
M. Akizuki ◽  
T. Yodoshi ◽  
I. Yamada
Keyword(s):  
Kinetic Energy ◽  
Oxide Film ◽  
Film Formation ◽  
Ion Beam ◽  
Ion Beams ◽  
Flat Panel Display ◽  
Low Resistivity ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Oxygen Cluster

ABSTRACTA new oxide film formation technique using gas-cluster ion beams has been developed. 02 cluster ions were used to irradiate during the evaporation of metal atoms, and PbOx and In203 films were grown. At the acceleration voltages above 5 kV, polycrystalline PbOx films preferentially oriented to (111) were obtained. A significant smoothing effect was observed with an acceleration voltage as low as 1 kV. An average surface roughness of 0.9 nm was obtained at 7 kV. Oxygen cluster ion beams are also utilized to grow In203 films, which are widely used as conductive-transparent films in flat panel display. In203 was deposited on glass or silicon substrates with simultaneous irradiation with an oxygen cluster ion beam. Highly transparent (80%) and low resistivity (<4×10−4 Ωcm) films were obtained with 7keV oxygen cluster ion beams. Kinetic energy of above 3keV is necessary to obtain low resistivity films. These results clearly indicate that the kinetic energy of the cluster is effectively used to enhance oxidation on the surface without radiation damage, in spite of the high acceleration voltages.

Advanced ion beam technology for versatile oxide thin film formation

2007 ◽  
Vol 7 (5) ◽  
pp. 561-573 ◽  
Author(s):  
Young-gun Han ◽  
Jung Hwan Lee ◽  
Un-Jung Yeo ◽  
Seok-Kyun Song ◽  
Jin-Wook Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Ion Beam ◽  
Oxide Thin Film ◽  
Thin Film Formation
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