Surface treatment of silicone rubber by carbon negative-ion implantation for nerve regeneration

2004 ◽  
Vol 235 (1-2) ◽  
pp. 182-187 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Masayoshi Izukawa ◽  
Ryosuke Ikeguchi ◽  
Ryosuke Kakinoki ◽  
Hiroko Sato ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Surface Treatment ◽  
Nerve Regeneration ◽  
Silicone Rubber ◽  
Negative Ion

Nerve-cell attachment properties of polystyrene and silicone rubber modified by carbon negative-ion implantation

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8123-8126 ◽  
Author(s):  
H. Tsuji ◽  
P. Sommani ◽  
T. Kitamura ◽  
M. Hattori ◽  
H. Sato ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nerve Cell ◽  
Silicone Rubber ◽  
Cell Attachment ◽  
Negative Ion

scholarly journals Osteoblast Patterning on Silicone Rubber by using Mesenchymal Stem Cells and Carbon Negative-Ion Implantation

2011 ◽  
Vol 36 (3) ◽  
pp. 317-320
Author(s):  
Piyanuch Sommani ◽  
Hiroshi Tsuji ◽  
Hiroko Sato ◽  
Yasuhito Gotoh ◽  
Gikan H. Takaoka
Keyword(s):  
Stem Cells ◽  
Mesenchymal Stem Cells ◽  
Ion Implantation ◽  
Silicone Rubber ◽  
Negative Ion

scholarly journals Protein Adsorption Properties on Silicone Rubber Modified by Carbon Negative-Ion Implantation

2007 ◽  
Vol 32 (4) ◽  
pp. 925-928
Author(s):  
Piyanuch Sommani ◽  
Hiroshi Tsuji ◽  
Hiroko Sato ◽  
Mitsutaka Hattori ◽  
Tetsuya Yamada ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Protein Adsorption ◽  
Silicone Rubber ◽  
Adsorption Properties ◽  
Negative Ion

scholarly journals Mesenchymal Stem Cell Attachment Properties on Silicone Rubber Modified by Carbon Negative-Ion Implantation

2007 ◽  
Vol 32 (4) ◽  
pp. 921-924
Author(s):  
Piyanuch Sommani ◽  
Hiroshi Tsuji ◽  
Hiroko Sato ◽  
Mitsutaka Hattori ◽  
Tetsuya Yamada ◽  
...  
Keyword(s):  
Stem Cell ◽  
Mesenchymal Stem Cell ◽  
Ion Implantation ◽  
Silicone Rubber ◽  
Cell Attachment ◽  
Negative Ion

scholarly journals Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

2006 ◽  
Vol 77 (3) ◽  
pp. 03A510 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Toyoji Ishibashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Layer ◽  
Negative Ion ◽  
Nanoparticle Formation

Negative-Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Junzo Ishikawa
Keyword(s):  
Ion Implantation ◽  
Negative Ions ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Currents ◽  
Promising Technique ◽  
Surface Charging ◽  
Silicon Carbon ◽  
A Charge

AbstractNegative-ion implantation is a promising technique for forthcoming ULSI (more than 256 M bits) fabrication and TFT (for color LCD) fabrication, since the surface charging voltage of insulated electrodes or insulators implanted by negative ions is found to saturate within so few as several volts, no breakdown of insulators would be expected without a charge neutralizer in these fabrication processes. Scatter-less negative-ion implantation into powders is also possible. For this purpose an rf-plasma-sputter type heavy negative-ion source was developed, which can deliver several milliamperes of various kinds of negative ion currents such as boron, phosphor, silicon, carbon, copper, oxygen, etc. A medium current negative-ion implanter with a small version of this type of ion source has been developed.

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