The electron counting rule and passivation of compound semiconductor surfaces

2006 ◽  
Vol 252 (21) ◽  
pp. 7600-7607 ◽  
Author(s):  
G.P. Srivastava
Keyword(s):  
Compound Semiconductor ◽  
Semiconductor Surfaces ◽  
Counting Rule ◽  
Electron Counting

Ferromagnetic Dirac Half-Metallicity in Transition Metal Embedded Honeycomb Borophene

2021 ◽  
Author(s):  
Yanxia Wang ◽  
Xue Jiang ◽  
Yi Wang ◽  
Jijun Zhao
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Valence Electron ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Next Generation ◽  
Half Metallicity ◽  
Counting Rule ◽  
Spintronic Devices ◽  
Electron Counting

Exploring two-dimensional (2D) ferromagnetic materials with intrinsic Dirac half-metallicity is crucial for the development of next-generation spintronic devices. Based on first-principles calculations, here we propose a simple valence electron-counting rule...

Hydrogen Plasma Etching of III-V Compound Semiconductor Surfaces

1982 ◽  
Author(s):  
R. P. H. Chang ◽  
C. W. Tu ◽  
C. C. Chang ◽  
S. Darack ◽  
A. R. Schlier
Keyword(s):  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Compound Semiconductor ◽  
Semiconductor Surfaces
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