Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

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Photoreflectance Characterization of the Semi-Insulating InP Substrate Interface with InGaAs and InAlAs Epilayers

MRS Proceedings ◽

10.1557/proc-281-121 ◽

1992 ◽

Vol 281 ◽

Author(s):

Weimin Zhou ◽

H. Shen ◽

J. Pamulapati ◽

M. Dutta ◽

B. R. Bennett ◽

...

Keyword(s):

Electron Transition ◽

In Situ Monitoring ◽

Signal Phase ◽

Mbe Growth ◽

Substrate Interface ◽

Inp Substrate ◽

Excitonic Transition ◽

Inp Substrates

ABSTRACTPhotoreflectance (PR) has been performed on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. From investigations of the temperature dependence, time constant dependence and an additional cw light beam intensity dependence, three substrate peaks are identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation (KFO), and a transition from the spin-orbit split-off valence band. The results are indicative of a redistribution of charge near the substrate interface in the process of MBE growth; the associated PR signal (phase) could be used for in-situ monitoring of epilayer growth on SI-InP wafers.

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Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517510 ◽

2005 ◽

Author(s):

P. Schwesig ◽

U. Sahr ◽

J. Friedrich ◽

G. Muller ◽

A. Kohler ◽

...

Keyword(s):

Vertical Gradient ◽

Inp Substrate ◽

Vertical Gradient Freeze

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Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-induced current spectroscopy (PICS)

Proceedings of the 7th Conference on Semi-insulating III-V Materials, ◽

10.1109/sim.1992.752721 ◽

2005 ◽

Author(s):

R. Sung ◽

M.B. Das

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Induced Current ◽

Inp Substrate

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Quantitative characterization of surface deformation in polymer composites using digital image analysis

Polymer Engineering & Science ◽

10.1002/pen.10416 ◽

1996 ◽

Vol 36 (2) ◽

pp. 298-304 ◽

Cited By ~ 51

Author(s):

Robert S. Kody ◽

David C. Martin

Keyword(s):

Image Analysis ◽

Polymer Composites ◽

Digital Image ◽

Digital Image Analysis ◽

Surface Deformation ◽

Quantitative Characterization

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Characterization of surface deformation with the Edge of LightTM technique

Machine Vision and Applications ◽

10.1007/s00138-007-0075-1 ◽

2007 ◽

Vol 19 (1) ◽

pp. 35-42 ◽

Cited By ~ 3

Author(s):

Z. Liu ◽

M. Genest ◽

A. Marincak ◽

D. S. Forsyth

Keyword(s):

Surface Deformation

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AFM characterization of the evolution of surface deformation during fatigue in polycrystalline copper

Acta Materialia ◽

10.1016/s1359-6454(01)00271-3 ◽

2001 ◽

Vol 49 (18) ◽

pp. 3755-3765 ◽

Cited By ~ 62

Author(s):

L. Cretegny ◽

A. Saxena

Keyword(s):

Surface Deformation ◽

Polycrystalline Copper

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Characterization of Mn-Doped in 1−x GaxAsyP1−y Grown By Lpee

MRS Proceedings ◽

10.1557/proc-102-201 ◽

1987 ◽

Vol 102 ◽

Author(s):

Shanthi N. Iyer ◽

Ali Abul-Fadl ◽

Ward J. Collis ◽

Mohammad N. Khorrami

Keyword(s):

Thermal Activation ◽

Hole Concentration ◽

Hole Mobility ◽

Thermal Activation Energy ◽

Photoluminescence Spectra ◽

Inp Substrate ◽

Donor And Acceptor ◽

Lattice Matched ◽

Mn Doped

ABSTRACTMn-doped In1−x GaxAsyP1−y epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analysed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10K as a function of the excitation level.

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