Influence of Si substrate preparation on surface chemistry and morphology of L-CVD SnO2 thin films studied by XPS and AFM

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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MOCVD and properties of in situ doped Pt-SnO2 thin films

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999881 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-643-Pr8-650 ◽

Cited By ~ 1

Author(s):

M. Amjoud ◽

F. Maury

Keyword(s):

Thin Films ◽

Sno2 Thin Films

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Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

JOURNAL OF ADVANCES IN PHYSICS ◽

10.24297/jap.v12i3.45 ◽

2016 ◽

Vol 12 (3) ◽

pp. 4394-4399

Author(s):

Sura Ali Noaman ◽

Rashid Owaid Kadhim ◽

Saleem Azara Hussain

Keyword(s):

Thin Films ◽

Optical Properties ◽

Tin Oxide ◽

Thermal Evaporation ◽

Pure Sno2 ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

X Ray ◽

Evaporation Technique ◽

Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and SiliconÂ substratesÂ byÂ thermal evaporation technique.Â X-ray diffraction pattern of Â pure SnO2 and SnO2:In thin films annealed at 650oC and the results showedÂ that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pureÂ SnO2 and Â Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.Â Optical properties such asÂ Transmission , optical band-gap have been measured and calculated.

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Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.04.024 ◽

2011 ◽

Vol 324 (1) ◽

pp. 98-102 ◽

Cited By ~ 12

Author(s):

Zhen Zhu ◽

Jin Ma ◽

Lingyi Kong ◽

Caina Luan ◽

Qiaoqun Yu

Keyword(s):

Thin Films ◽

Sno2 Thin Films

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Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

Journal of Materials Research ◽

10.1557/jmr.1992.3065 ◽

1992 ◽

Vol 7 (11) ◽

pp. 3065-3071 ◽

Cited By ~ 4

Author(s):

Peir-Yung Chu ◽

Isabelle Campion ◽

Relva C. Buchanan

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Phase Transformation ◽

Heating Rate ◽

Tetragonal Phase ◽

Monoclinic Phase ◽

Preferred Orientation ◽

Si Substrate ◽

Interfacial Diffusion ◽

Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

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