Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

2013 ◽  
Vol 280 ◽  
pp. 104-108 ◽  
Author(s):  
Feng-Hao Hsu ◽  
Na-Fu Wang ◽  
Yu-Zen Tsai ◽  
Ming-Chieh Chuang ◽  
Yu-Song Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Zno Thin Film ◽  
Dc Magnetron Sputtering ◽  
Working Pressure

Effects of sputtering power toward the Al-doped ZnO thin Film prepared by pulsed DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Zno Thin Film ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Sputtering Power ◽  
Doped Zno ◽  
Pulsed Dc Magnetron Sputtering

HIGH-QUALITY INTRINSIC ZnO FILM FOR THE APPLICATION OF SOLAR CELL GROWN BY ICP-ASSISTED REACTIVE DC MAGNETRON SPUTTERING AT LOW TEMPERATURE

2007 ◽  
Vol 14 (06) ◽  
pp. 1083-1087
Author(s):  
X. B. XU ◽  
S. M. HUANG ◽  
Y. W. CHEN ◽  
Z. SUN ◽  
S. Y. HUANG
Keyword(s):  
Solar Cell ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Inductively Coupled Plasma ◽  
Visible Range ◽  
Zno Film ◽  
Dc Magnetron Sputtering ◽  
Working Pressure ◽  
Solar Cell Application ◽  
Inductively Coupled

Intrinsic zinc oxide (i- ZnO ) film was prepared for CuInSe 2 (CIS) solar cell application [L. Stolt and J. Hedstrom, Appl. Phys. Lett.62 (1993) 8; D. Rudmann, Ph.D. Thesis, University of Basel, Basel, (2004)] on glass substrate by inductively coupled plasma (ICP)-assisted DC magnetron sputtering and under a quite low temperature of 50°C. The sputtering was done in an Ar and O 2 gas mixture and a ceramic ZnO target was used. The microstructures of the film were investigated by X-ray diffractometer and scanning electron microscope. It was shown that all of the films had a c-axis preferred orientation perpendicular to the substrate. In our work, film with resistivity of 7 × 108Ω· cm and transmittance of about 80% in the visible range was prepared under the conditions of 4 mTorr working pressure and 50°C temperature.

Working Pressure Dependence of Structure and Optical Performance of Zinc Oxide Thin Films by Magnetron Sputtering

2013 ◽  
Vol 734-737 ◽  
pp. 2572-2575 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Energy Gap ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Optical Performance ◽  
Optical Energy Gap ◽  
Working Pressure

Zinc oxide (ZnO) thin films were grown by magnetron sputtering onto glass substrates employing a sintered ceramic target and pure argon gas. The influence of working pressure on structure and optical performance of the thin films were studied by the measurements of X-ray diffraction (XRD) patterns and optical transmission spectra. The optical energy gap of the ZnO thin film were calculated according to the Taucs law. The results demonstrate that all the ZnO thin films have preferred orientation along (002) direction. The working pressure affects not only the structure parameters such as lattice constant, strain and stress in the plane of the film, but also the optical transmittance and energy gap of the ZnO thin films. The ZnO thin film deposited at the working pressure of 0.5 Pa exhibits the maximum average visible transmittance of 86.6%, a compressive stress of 1.72×109 Pa, and an optical energy gap of 3.273 eV.

Effects of Working Pressure on the Microstructure and Properties of ZnO Thin Films Prepared by DC Magnetron Sputtering

2012 ◽  
Vol 503-504 ◽  
pp. 692-695
Author(s):  
Fei Gao ◽  
Xiao Yan Liu ◽  
Li Yun Zheng ◽  
Mei Xia Li ◽  
Rui Jiao Jiang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Diffraction Peak ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Working Pressure ◽  
X Ray ◽  
Orientation Growth

ZnO thin films were prepared by DC magnetron sputtering. The effects working pressures on the microstructure, optical properties and the photoluminescent properties were studied. The results show that ZnO thin films were successfully prepared with preferred orientation growth, showing structure of single crystal. The transmission of all the ZnO thin films kept above 85%. With increasing the working pressure, the surface of ZnO thin film became coarse, the intensity of X-ray diffraction peak decreased and the transmission of the film decreased and then increased. The intensity of the two photoluminescence peak of ZnO thin films one ultraviolet peak at 400 nm and one blue peak at 466 nm increased with increasing the working pressure. The ultraviolet peak was originated from the transition emission of the electrons from the conduction band to the valence band while the blue peak was originated from the defects in ZnO thin films.

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film
Sign in / Sign up

Export Citation Format

Share Document