Working Pressure Dependence of Structure and Optical Performance of Zinc Oxide Thin Films by Magnetron Sputtering

2013 ◽  
Vol 734-737 ◽  
pp. 2572-2575 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Energy Gap ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Optical Performance ◽  
Optical Energy Gap ◽  
Working Pressure

Zinc oxide (ZnO) thin films were grown by magnetron sputtering onto glass substrates employing a sintered ceramic target and pure argon gas. The influence of working pressure on structure and optical performance of the thin films were studied by the measurements of X-ray diffraction (XRD) patterns and optical transmission spectra. The optical energy gap of the ZnO thin film were calculated according to the Taucs law. The results demonstrate that all the ZnO thin films have preferred orientation along (002) direction. The working pressure affects not only the structure parameters such as lattice constant, strain and stress in the plane of the film, but also the optical transmittance and energy gap of the ZnO thin films. The ZnO thin film deposited at the working pressure of 0.5 Pa exhibits the maximum average visible transmittance of 86.6%, a compressive stress of 1.72×109 Pa, and an optical energy gap of 3.273 eV.

scholarly journals Effect of thickness on the optical properties of ZnO thin films prepared by pulsed laser deposition technique (PLD)

2019 ◽  
Vol 15 (32) ◽  
pp. 114-121
Author(s):  
Maysar A. Salim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Energy Gap ◽  
Transparent Conducting Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Optical Energy Gap

Zinc Oxide (ZnO) thin films of different thickness were preparedon ultrasonically cleaned corning glass substrate, by pulsed laserdeposition technique (PLD) at room temperature. Since mostapplication of ZnO thin film are certainly related to its opticalproperties, so the optical properties of ZnO thin film in thewavelength range (300-1100) nm were studied, it was observed thatall ZnO films have high transmittance (˃ 80 %) in the wavelengthregion (400-1100) nm and it increase as the film thickness increase,using the optical transmittance to calculate optical energy gap (Egopt)show that (Egopt) of a direct allowed transition and its value nearlyconstant (~ 3.2 eV) for all film thickness (150, 180, 210, and 240)nm, so Zn0 thin films were used as a transparent conducting oxide(TCO) in various optoelectronic application such as a window in athin film solar cells.

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

Investigation of Optical Properties of Aluminium Doped Zinc Oxide Thin Films Deposited by Magnetron Sputtering

2013 ◽  
Vol 446-447 ◽  
pp. 259-262
Author(s):  
J.H. Gu ◽  
T. Zhang ◽  
Z.Y. Zhong ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Energy Gap ◽  
Dispersion Model ◽  
Argon Pressure ◽  
Optical Energy Gap ◽  
Characterization Methods

Aluminium doped zinc oxide (AZO) thin films were prepared by magnetron-sputtering. The optical and structural properties of the films were investigated by optical transmission spectra and X-ray diffraction (XRD) measurements, respectively. The results indicate that the AZO films have hexagonal wurtzite structure with highly c-axis preferred orientation. The optical and structural properties of the films are observed to be subjected to the argon pressure. The AZO film prepared at the argon pressure of 0.5 Pa exhibits the largest crystallite size and the highest average visible transmittance. Also, the refractive index and optical energy-gap of the films were determined by optical characterization methods. The dispersion behavior of the refractive index was studied using the Sellmeier’s dispersion model.

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

Effect of Deposition Time on Properties of Nanostructured ZnO Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 460-465 ◽  
Author(s):  
Nor Diyana Md Sin ◽  
M.H. Mamat ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Time Increase ◽  
Nanostructured Thin Film

The effect of deposition time on properties of ZnO nanostructured thin film was investigated. The ZnO thin films were deposited at various times from 15~75 minutes. The ZnO thin film at 60 min deposition time shows the highest current density and high conductivity with 2.15x10-2 Scm-1. The optical properties of ZnO thin films show high transmittance with >80% at 380 nm to 1200 nm. The thickness of ZnO thin film increases linearly with deposition time. The size of ZnO thin films increase as the deposition time increase. Based from fesem images, the ZnO nanocolumnar structure was formed at 15 to 60 minutes deposition time while at 75 minutes the sample formed nanoflakes structure.

Effects of Working Pressure on the Microstructure and Properties of ZnO Thin Films Prepared by DC Magnetron Sputtering

2012 ◽  
Vol 503-504 ◽  
pp. 692-695
Author(s):  
Fei Gao ◽  
Xiao Yan Liu ◽  
Li Yun Zheng ◽  
Mei Xia Li ◽  
Rui Jiao Jiang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Diffraction Peak ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Working Pressure ◽  
X Ray ◽  
Orientation Growth

ZnO thin films were prepared by DC magnetron sputtering. The effects working pressures on the microstructure, optical properties and the photoluminescent properties were studied. The results show that ZnO thin films were successfully prepared with preferred orientation growth, showing structure of single crystal. The transmission of all the ZnO thin films kept above 85%. With increasing the working pressure, the surface of ZnO thin film became coarse, the intensity of X-ray diffraction peak decreased and the transmission of the film decreased and then increased. The intensity of the two photoluminescence peak of ZnO thin films one ultraviolet peak at 400 nm and one blue peak at 466 nm increased with increasing the working pressure. The ultraviolet peak was originated from the transition emission of the electrons from the conduction band to the valence band while the blue peak was originated from the defects in ZnO thin films.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Plasma Pre-Treatment of Polyethylene Terephthalate Substrate Influence on the Properties of ZnO Thin Film

2014 ◽  
Vol 895 ◽  
pp. 41-44
Author(s):  
Seiw Yen Tho ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Water Contact ◽  
Pre Treatment ◽  
Pet Substrate

In this work, the influences of plasma pre-treatment on polyethylene terephthalate (PET) substrate to the properties of ZnO thin film have been carried out. ZnO thin films were successfully grown on PET substrate by spin coating method. In order to study the effects of plasma pre-treatment, a comparison of treated and untreated condition was employed. Water contact angle measurement had been carried out for PET wettability study prior to ZnO thin film coating. Morphology study of ZnO thin film was performed by scanning probe microscope (SPM). Besides, optical study of the ZnO thin film was done by using UV-vis spectrophotometer. All the measured results show that plasma pre-treatment of PET substrate plays an important role in enhancing the wettability of PET and optical properties of the ZnO thin films. In conclusion, pre-treatment of PET surface is essential to produce higher quality ZnO thin film on this particular substrate in which would pave the way for the integration of future devices.

Study on Structural Properties of Gallium and Titanium Doped Zinc Oxide Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 908 ◽  
pp. 124-128 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Crystal Structures ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
Working Pressure ◽  
Sintered Ceramic ◽  
Glass Substrates ◽  
Zinc Oxide Films

Thin films of transparent conducting gallium and titanium doped zinc oxide (GTZO) were prepared on glass substrates by magnetron sputtering technique using a sintered ceramic target. The microstructural properties of the deposited thin films were characterized with X-ray diffraction (XRD). The results demonstrated that the polycrystalline GTZO thin films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the working pressure significantly affects the crystal structures of the thin films. The GTZO thin film deposited at the working pressure of 0.4 Pa has the best crystallinity, the largest grain size and the lowest stress.

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