Investigation of the possibility of unfiltered aluminium vacuum arc plasma application for high-frequency short-pulse plasma immersion ion implantation

2014 ◽  
Vol 310 ◽  
pp. 120-125 ◽  
Author(s):  
D.O. Sivin ◽  
A.I. Ryabchikov ◽  
A.I. Bumagina ◽  
E.N. Bolbasov ◽  
N.V. Daneikina
Keyword(s):  
Ion Implantation ◽  
High Frequency ◽  
Short Pulse ◽  
Pulse Plasma ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
Plasma Immersion Ion Implantation

Unfiltered Aluminium Vacuum Arc Plasma Application for High-Frequency Short-Pulse Plasma Immersion Ion Implantation

2014 ◽  
Vol 880 ◽  
pp. 155-160 ◽  
Author(s):  
Alexander Ryabchikov ◽  
Denis Sivin ◽  
Anna Ivanova (Bumagina) ◽  
Evgeniy Bolbasov ◽  
Natalya Daneikina
Keyword(s):  
Ion Implantation ◽  
High Frequency ◽  
Treatment Time ◽  
Short Pulse ◽  
Substrate Surface ◽  
Pulse Plasma ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
Bias Potential ◽  
Plasma Immersion Ion Implantation

This paper is devoted to the studying of the dynamical changes in the density of aluminium microparticles (MPs) on the substrate surface made of stainless steel, immersed in vacuum arc plasma, at high-frequency short-pulse negative bias potential. It is shown experimentally that the density of aluminium MPs on the substrate surface is decreased dynamically by 3 orders when the treatment time is increased from 15 s to 3 min at the bias potential –2 kV. A possibility of the application of MPs unfiltered vacuum arc plasma for high-frequency short-pulse plasma immersion ion implantation to form the intermetallic layers is discussed.

scholarly journals EFFECT OF PULSED SUBSTRATE BIASING ON MACROPARTICLE IN VACUUM ARC

2019 ◽  
pp. 120-123
Author(s):  
E.V. Romashchenko ◽  
A.A. Bizyukov ◽  
I.О. Girka
Keyword(s):  
Ion Implantation ◽  
Pulse Duration ◽  
Analytical Model ◽  
Duty Cycle ◽  
Voltage Pulse ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
Charge Dynamics ◽  
Proposed Model ◽  
Plasma Immersion Ion Implantation

An analytical model of the interaction of macroparticle (MP) with vacuum arc plasma in plasma immersion ion implantation (PIII) is presented. The proposed model is based on combination of the theory of charge dynamics of MP and sheath model for PIII. In the framework of this model, the MP charge dynamics during voltage pulse as well as during interval between pulses is investigated. It is obtained that MP charge and MP behavior depend on pulsed bias parameters such as pulse duration, duty cycle and bias amplitude. It is shown that pulsed substrate biasing is effective method to control of the MPs in plasma processing.

Sign in / Sign up

Export Citation Format

Share Document