Growth of (110)-oriented diamond films by electron-assisted chemical vapor deposition

Diamond films were deposited on Si substrates by Electron-Assisted Chemical Vapor Deposition (EACVD) using various methane concentrations below 8.1%. It was found that the deposited films were strongly (110)-oriented. This seemed to arise from a high nucleation density of diamond caused by the initial deposition of an amorphous carbon film. A comparison of the graphite etching rate between EACVD and Microwave Plasma CVD (MPCVD) under the standard growth conditions showed that EACVD was able to etch graphite about five times faster than MPCVD. Hence, it was concluded that the differences in the growth rate and morphology between EACVD and MPCVD arise from the different graphite etching rates as well as different chemical species in the reaction gas.

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Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.281.893 ◽

2018 ◽

Vol 281 ◽

pp. 893-899 ◽

Cited By ~ 1

Author(s):

Yi Fan Xi ◽

Jian Huang ◽

Ke Tang ◽

Xin Yu Zhou ◽

Bing Ren ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Nucleation Density ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Si Substrates ◽

Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

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A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

Journal of Materials Research ◽

10.1557/jmr.1997.0358 ◽

1997 ◽

Vol 12 (10) ◽

pp. 2686-2698 ◽

Cited By ~ 14

Author(s):

L. Fayette ◽

B. Marcus ◽

M. Mermoux ◽

N. Rosman ◽

L. Abello ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Sequential Analysis ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Diamond Growth ◽

Internal Stresses ◽

Nucleation Density ◽

Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

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