A concise way to estimate the average density of interface states in an ITO–SiO x /n-Si heterojunction solar cell

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

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Silicon Heterojunction Solar Cell: A New Buffer Layer Concept With Low-Temperature Epitaxial Silicon

IEEE Transactions on Electron Devices ◽

10.1109/ted.2004.836801 ◽

2004 ◽

Vol 51 (11) ◽

pp. 1818-1824 ◽

Cited By ~ 22

Author(s):

E. Centurioni ◽

D. Iencinella ◽

R. Rizzoli ◽

F. Zignani

Keyword(s):

Solar Cell ◽

Low Temperature ◽

Buffer Layer ◽

Heterojunction Solar Cell ◽

Epitaxial Silicon ◽

Silicon Heterojunction Solar Cell ◽

Layer Concept

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Charge transport mechanism in copper phthalocyanine thin films with and without traps

RSC Advances ◽

10.1039/c7ra08316e ◽

2017 ◽

Vol 7 (86) ◽

pp. 54911-54919 ◽

Cited By ~ 10

Author(s):

Varsha Rani ◽

Akanksha Sharma ◽

Pramod Kumar ◽

Budhi Singh ◽

Subhasis Ghosh

Keyword(s):

Thin Films ◽

Charge Transport ◽

Grain Boundaries ◽

Transport Mechanism ◽

Copper Phthalocyanine ◽

Organic Thin Films ◽

Interface States ◽

Charge Transport Mechanism ◽

Density Of Interface States

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.

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Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.334 ◽

2011 ◽

Vol 679-680 ◽

pp. 334-337 ◽

Cited By ~ 1

Author(s):

Pétur Gordon Hermannsson ◽

Einar Ö. Sveinbjörnsson

Keyword(s):

Energy Distribution ◽

Oxidation Rate ◽

Alkali Metals ◽

Interface States ◽

Significant Enhancement ◽

Interface Traps ◽

Strong Reduction ◽

Dry Oxidation ◽

Density Of Interface States

We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.

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